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CSD87350Q5D

  • In Stock: 468985
  • Available: 83263

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.52000US $2.52
10+US $1.68000US $16.80
30+US $1.26000US $37.80
100+US $1.00800US $100.80
500+US $0.92400US $462.00
1000+US $0.84000US $840.00

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  • Description
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Description

The CSD87350Q5D is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. It is designed for applications requiring efficient power management, such as DC-DC converters, power supplies, and motor control systems.

Key Features:

  1. Type: N-channel MOSFET
  2. Package: The device comes in a compact QFN (Quad Flat No-lead) package, specifically the 5mm x 6mm size, which allows for efficient thermal management and space-saving on PCBs (Printed Circuit Boards).
  3. Voltage Rating: The CSD87350Q5D typically has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low-voltage applications.
  4. Current Rating: It can handle continuous drain currents of up to 50A, depending on the thermal conditions and PCB layout, which makes it robust for high-current applications.
  5. R_DS(on): The on-resistance (R_DS(on)) is very low, typically around 5.5 mΩ at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced conduction losses and improved efficiency.
  6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 1V to 2.5V, allowing for easy drive with standard logic levels.
  7. Switching Speed: The device is optimized for fast switching, which is crucial for applications like synchronous rectification and high-frequency converters.
  8. Thermal Performance: The QFN package provides excellent thermal performance, with a thermal resistance junction-to-ambient (RθJA) that allows for effective heat dissipation.

Applications:

  • DC-DC Converters: Ideal for buck, boost, and buck-boost converters in power supply designs.
  • Power Management: Used in battery management systems and power distribution networks.
  • Motor Control: Suitable for driving motors in various applications, including robotics and industrial automation.

Electrical Characteristics:

  • Input Capacitance (Ciss): Typically around 2000 pF, which affects the drive requirements and switching performance.
  • Output Capacitance (Coss): This is usually around 200 pF, influencing the turn-off characteristics.
  • Reverse Recovery: The device exhibits minimal reverse recovery charge, making it suitable for synchronous rectification applications.

Conclusion:

The CSD87350Q5D from Texas Instruments is a versatile and efficient power MOSFET that meets the demands of modern power electronics. Its combination of low on-resistance, high current capability, and compact packaging makes it an excellent choice for a wide range of applications in power management and control systems.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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