CSD87355Q5D

The CSD87355Q5D is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. It is designed for applications requiring efficient power management, such as DC-DC converters, power supplies, and motor control systems.

Key Features:

1. Package Type: The CSD87355Q5D comes in a compact QFN (Quad Flat No-lead) package, which allows for efficient thermal management and space-saving on printed circuit boards (PCBs). The QFN package typically has a low profile and provides excellent electrical performance due to its short lead lengths.

2. Voltage Rating: This MOSFET is rated for a maximum drain-source voltage (V_DS) of around 55V, making it suitable for a variety of medium-voltage applications.

3. Current Rating: It can handle a continuous drain current (I_D) of up to 60A, depending on the thermal conditions and PCB layout, which allows it to drive high loads effectively.

4. R_DS(on): The on-resistance (R_DS(on)) is very low, typically in the range of a few milliohms. This low resistance minimizes power losses during operation, enhancing overall efficiency and thermal performance.

5. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is designed to be low, allowing for easy drive with standard logic-level signals. This feature is crucial for applications where fast switching and low gate drive voltage are required.

6. Switching Speed: The CSD87355Q5D exhibits fast switching characteristics, which is essential for high-frequency applications. This helps in reducing switching losses and improving the overall efficiency of power conversion systems.

7. Thermal Performance: The device is designed to operate efficiently at elevated temperatures, with a maximum junction temperature (T_J) rating that allows for reliable performance in demanding environments.

8. Applications: Common applications for the CSD87355Q5D include synchronous buck converters, battery management systems, and other power management circuits where efficiency and thermal performance are critical.

Electrical Characteristics:

• V_DS (Max): 55V
• I_D (Max): 60A
• R_DS(on): Typically around 5-10 mΩ
• V_GS(th): Typically around 1-2V

Conclusion:

The CSD87355Q5D from Texas Instruments is a robust and efficient power MOSFET that is well-suited for a variety of power management applications. Its combination of low on-resistance, high current handling capability, and fast switching speeds makes it an excellent choice for engineers looking to optimize their designs for performance and efficiency.