CSD87501LT
- Manufacturer's Part No.:CSD87501LT
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- Series:NexFET™
- Description:MOSFET 2N-CH 30V 10PICOSTAR
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- In Stock: 504000
- Available: 134951
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.80400 | US $0.80 |
10+ | US $0.53600 | US $5.36 |
30+ | US $0.40200 | US $12.06 |
100+ | US $0.32160 | US $32.16 |
500+ | US $0.29480 | US $147.40 |
1000+ | US $0.26800 | US $268.00 |
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- Description
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The CSD87501LT is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. This component is designed for applications requiring efficient power management, such as in power supplies, motor drives, and other high-frequency switching applications.
Key Features:
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Type and Configuration: The CSD87501LT is a N-channel MOSFET, which means it uses electrons as the charge carriers. This type of configuration is known for its high efficiency and fast switching capabilities.
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Voltage and Current Ratings: It typically has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to medium voltage applications. The continuous drain current (I_D) rating can be around 50A, allowing it to handle significant loads.
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R_DS(on): One of the standout features of the CSD87501LT is its low on-resistance (R_DS(on)), which is often in the range of a few milliohms. This low resistance minimizes power loss during operation, enhancing overall efficiency.
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Thermal Performance: The device is designed to operate efficiently at elevated temperatures, with a thermal resistance junction-to-case (RθJC) that allows for effective heat dissipation. This is crucial for maintaining performance and reliability in demanding applications.
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Package Type: The CSD87501LT is typically housed in a compact, surface-mount package, such as a DPAK or similar, which facilitates easy integration into circuit boards and helps save space in electronic designs.
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Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is designed to be low, allowing the MOSFET to turn on quickly with minimal gate drive voltage, which is beneficial for high-speed switching applications.
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Applications: This MOSFET is ideal for use in synchronous rectification, DC-DC converters, and other power management circuits where efficiency and thermal performance are critical.
Performance Characteristics:
- Switching Speed: The CSD87501LT is optimized for fast switching, which reduces switching losses and improves overall efficiency in power conversion applications.
- Robustness: It is designed to withstand high levels of stress, making it suitable for automotive, industrial, and consumer electronics applications.
Conclusion:
The CSD87501LT from Texas Instruments is a versatile and efficient power MOSFET that meets the demands of modern electronic applications. Its combination of low on-resistance, high current handling capability, and robust thermal performance makes it a preferred choice for engineers looking to optimize power management in their designs.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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