CSD87503Q3ET
- Manufacturer's Part No.:CSD87503Q3ET
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- Series:NexFET™
- Description:30-V DUAL N-CHANNEL MOSFET COMM
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- In Stock: 1250
- Available: 750
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.01240 | US $2.01 |
10+ | US $1.34160 | US $13.42 |
30+ | US $1.00620 | US $30.19 |
100+ | US $0.80496 | US $80.50 |
500+ | US $0.73788 | US $368.94 |
1000+ | US $0.67080 | US $670.80 |
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- Description
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The CSD87503Q3ET is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. This component is designed for applications requiring efficient power management, such as in power supplies, motor drives, and other high-efficiency circuits.
Key Features:
- Type: N-channel MOSFET
- Package: The CSD87503Q3ET comes in a compact QFN (Quad Flat No-lead) package, which allows for efficient thermal management and space-saving on printed circuit boards (PCBs).
- Voltage Rating: It typically has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low-voltage applications.
- Current Rating: The device can handle continuous drain currents of up to 50A, depending on the thermal conditions and PCB layout.
- R_DS(on): The on-resistance (R_DS(on)) is very low, often in the range of a few milliohms, which minimizes power loss during operation and enhances overall efficiency.
- Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is designed to be low, allowing for easy drive with standard logic levels.
- Thermal Performance: The QFN package provides excellent thermal performance, with a thermal resistance junction-to-ambient (RθJA) that supports high-efficiency operation in demanding environments.
Applications:
- Power Management: Ideal for DC-DC converters, where efficient switching is crucial for minimizing energy loss.
- Motor Control: Suitable for driving motors in various applications, including robotics and industrial automation.
- Battery Management Systems: Used in systems that require efficient charging and discharging of batteries, particularly in electric vehicles and renewable energy systems.
Performance Characteristics:
- Switching Speed: The CSD87503Q3ET is designed for fast switching, which is essential for high-frequency applications.
- Thermal Stability: The device is built to maintain performance under varying thermal conditions, ensuring reliability in long-term operation.
- Robustness: It features built-in protection against over-voltage and over-current conditions, enhancing the durability of the circuit in which it is used.
Conclusion:
The CSD87503Q3ET from Texas Instruments is a versatile and efficient power MOSFET that meets the demands of modern electronic applications. Its combination of low on-resistance, high current handling capability, and compact packaging makes it an excellent choice for engineers looking to optimize power efficiency in their designs.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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