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CSD88537NDT
- Manufacturer's Part No.:CSD88537NDT
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- Series:NexFET™
- Description:MOSFET 2N-CH 60V 15A 8SOIC
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- In Stock: 29000
- Available: 96021
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $69.84000 | US $69.84 |
10+ | US $52.38000 | US $523.80 |
30+ | US $45.39600 | US $1361.88 |
100+ | US $40.15800 | US $4015.80 |
500+ | US $37.71360 | US $18856.80 |
1000+ | US $34.92000 | US $34920.00 |
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- Description
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The CSD88537NDT is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. This device is designed for a variety of applications, including power management, motor control, and DC-DC converters, where efficient switching and low on-resistance are critical.
Key Features:
- Type: N-channel MOSFET
- Package: The CSD88537NDT typically comes in a compact, surface-mount package, which allows for efficient thermal management and space-saving designs. The package is designed to facilitate easy integration into printed circuit boards (PCBs).
- Voltage Rating: The device has a maximum drain-source voltage (V_DS) rating, which allows it to handle high voltage applications, making it suitable for various power supply circuits.
- Current Rating: It can handle significant continuous drain current (I_D), which is essential for applications requiring high power throughput.
- On-Resistance (R_DS(on)): One of the standout features of the CSD88537NDT is its low on-resistance, which minimizes power loss during operation and enhances overall efficiency. This characteristic is particularly important in battery-powered devices and energy-efficient systems.
- Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is optimized for low-voltage drive applications, allowing for easy interfacing with microcontrollers and other logic devices.
- Thermal Performance: The MOSFET is designed to operate efficiently at elevated temperatures, with thermal resistance specifications that ensure reliable performance in demanding environments.
Applications:
- Power Management: Ideal for use in power supply circuits, where efficient switching is necessary to reduce energy loss.
- Motor Control: Suitable for driving motors in various applications, including robotics and industrial automation.
- DC-DC Converters: Commonly used in buck and boost converters, where high efficiency and fast switching speeds are required.
Electrical Characteristics:
- Maximum Ratings: The datasheet provides detailed maximum ratings for voltage, current, and power dissipation, ensuring that designers can safely operate the device within specified limits.
- Switching Performance: The CSD88537NDT exhibits fast switching speeds, which are crucial for high-frequency applications, reducing the time spent in transition states and improving overall efficiency.
Conclusion:
The CSD88537NDT from Texas Instruments is a versatile and efficient N-channel MOSFET that meets the demands of modern electronic applications. Its combination of low on-resistance, high current handling capability, and robust thermal performance makes it an excellent choice for engineers looking to optimize their designs for power efficiency and reliability.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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