CSD88539NDT
- Manufacturer's Part No.:CSD88539NDT
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:NexFET™
- Description:MOSFET 2N-CH 60V 15A 8SOIC
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 23297
- Available: 144509
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $5.40000 | US $5.40 |
10+ | US $4.86000 | US $48.60 |
30+ | US $3.78000 | US $113.40 |
100+ | US $3.10500 | US $310.50 |
500+ | US $2.97000 | US $1485.00 |
1000+ | US $2.70000 | US $2700.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerTexas
- Manufacturer's Part No.CSD88539NDT
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesNexFET™
- ECCNEAR99
- MountSurface Mount
- Width3.91mm
- Height1.75mm
- Length4.9mm
- Weight540.001716mg
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Rise Time9ns
- Thickness1.58mm
- FET FeatureLogic Level Gate
- Part StatusActive
- Pbfree Codeyes
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Contact PlatingGold
- Fall Time (Typ)4 ns
- Base Part NumberCSD88539
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time6 Weeks
- Threshold Voltage3V
- Additional FeatureAVALANCHE RATED
- Number of Channels2
- Number of Elements2
- Turn On Delay Time5 ns
- Vgs(th) (Max) @ Id3.6V @ 250μA
- Turn-Off Delay Time14 ns
- Element ConfigurationDual
- Max Power Dissipation2.1W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs28m Ω @ 5A, 10V
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min60V
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)6.3A
- Gate Charge (Qg) (Max) @ Vgs9.4nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)15A
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)60V
- Drain-source On Resistance-Max0.034Ohm
- Pulsed Drain Current-Max (IDM)46A
- Input Capacitance (Ciss) (Max) @ Vds741pF @ 30V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee4
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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