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CSD88539ND

  • In Stock: 17000
  • Available: 255942

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.71573US $0.72
10+US $0.47716US $4.77
30+US $0.35787US $10.74
100+US $0.28629US $28.63
500+US $0.26244US $131.22
1000+US $0.23858US $238.58

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  • Description
  • Alternatives
  • Shopping Guide
Description

The CSD88539ND is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. It is designed for applications requiring efficient power management, such as in power supplies, motor drives, and other high-frequency switching applications.

Key Features:

  1. Type: N-channel MOSFET
  2. Voltage Rating: The CSD88539ND typically has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low-voltage applications.
  3. Current Rating: It can handle continuous drain current (I_D) of up to 50A, which allows it to manage significant power loads effectively.
  4. R_DS(on): The on-resistance (R_DS(on)) is very low, often in the range of a few milliohms, which minimizes power loss during operation and enhances efficiency.
  5. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is designed to be low, allowing for easy drive with standard logic levels.
  6. Package Type: The CSD88539ND is typically housed in a compact, thermally efficient package, such as a DPAK or similar, which aids in heat dissipation and allows for a smaller footprint on PCBs.

Applications:

  • Power Management: Ideal for DC-DC converters, where efficient switching is crucial for minimizing energy loss.
  • Motor Control: Suitable for driving motors in various applications, including robotics and industrial automation.
  • Battery Management Systems: Used in systems that require efficient charging and discharging of batteries.

Performance Characteristics:

  • Thermal Performance: The device is designed to operate efficiently at elevated temperatures, with a high thermal conductivity that helps in managing heat dissipation.
  • Switching Speed: The CSD88539ND features fast switching capabilities, making it suitable for high-frequency applications where rapid on/off cycling is required.

Reliability:

Texas Instruments emphasizes reliability in their components, and the CSD88539ND is no exception. It is designed to withstand harsh operating conditions and has built-in protection features to prevent damage from overcurrent and thermal overload.

Conclusion:

The CSD88539ND from Texas Instruments is a robust and efficient N-channel MOSFET that is well-suited for a variety of power management applications. Its combination of high current handling, low on-resistance, and compact packaging makes it a popular choice among engineers looking to optimize performance in their designs.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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