CSD88539ND
- Manufacturer's Part No.:CSD88539ND
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- Series:NexFET™
- Description:MOSFET 2N-CH 60V 15A 8SOIC
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- In Stock: 264918
- Available: 255942
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $11.00000 | US $11.00 |
10+ | US $9.90000 | US $99.00 |
30+ | US $7.70000 | US $231.00 |
100+ | US $6.32500 | US $632.50 |
500+ | US $6.05000 | US $3025.00 |
1000+ | US $5.50000 | US $5500.00 |
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- Description
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The CSD88539ND is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Texas Instruments. It is designed for applications requiring efficient power management, such as in power supplies, motor drives, and other high-frequency switching applications.
Key Features:
- Type: N-channel MOSFET
- Voltage Rating: The CSD88539ND typically has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low-voltage applications.
- Current Rating: It can handle continuous drain current (I_D) of up to 50A, which allows it to manage significant power loads effectively.
- R_DS(on): The on-resistance (R_DS(on)) is very low, often in the range of a few milliohms, which minimizes power loss during operation and enhances efficiency.
- Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is designed to be low, allowing for easy drive with standard logic levels.
- Package Type: The CSD88539ND is typically housed in a compact, thermally efficient package, such as a DPAK or similar, which aids in heat dissipation and allows for a smaller footprint on PCBs.
Applications:
- Power Management: Ideal for DC-DC converters, where efficient switching is crucial for minimizing energy loss.
- Motor Control: Suitable for driving motors in various applications, including robotics and industrial automation.
- Battery Management Systems: Used in systems that require efficient charging and discharging of batteries.
Performance Characteristics:
- Thermal Performance: The device is designed to operate efficiently at elevated temperatures, with a high thermal conductivity that helps in managing heat dissipation.
- Switching Speed: The CSD88539ND features fast switching capabilities, making it suitable for high-frequency applications where rapid on/off cycling is required.
Reliability:
Texas Instruments emphasizes reliability in their components, and the CSD88539ND is no exception. It is designed to withstand harsh operating conditions and has built-in protection features to prevent damage from overcurrent and thermal overload.
Conclusion:
The CSD88539ND from Texas Instruments is a robust and efficient N-channel MOSFET that is well-suited for a variety of power management applications. Its combination of high current handling, low on-resistance, and compact packaging makes it a popular choice among engineers looking to optimize performance in their designs.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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