DDTB142JU-7-F
- Manufacturer's Part No.:DDTB142JU-7-F
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- Description:TRANS PREBIAS PNP 200MW SOT323
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- In Stock: 34648
- Available: 3000
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.62700 | US $0.63 |
10+ | US $0.41800 | US $4.18 |
30+ | US $0.31350 | US $9.41 |
100+ | US $0.25080 | US $25.08 |
500+ | US $0.22990 | US $114.95 |
1000+ | US $0.20900 | US $209.00 |
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- Description
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The DDTB142JU-7-F is a high-performance dual N-channel MOSFET from Diodes Incorporated, designed for a variety of applications including power management, switching, and signal amplification. This component is particularly noted for its compact size and efficient operation, making it suitable for use in space-constrained environments.
Key Features:
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Configuration: The DDTB142JU-7-F features a dual N-channel configuration, which allows for the simultaneous control of two separate loads or circuits, enhancing versatility in design.
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Package Type: It is housed in a small, surface-mount package (SOT-23), which facilitates easy integration into printed circuit boards (PCBs) and helps save space in electronic designs.
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Voltage and Current Ratings: The device typically supports a maximum drain-source voltage (V_DS) of around 30V and a continuous drain current (I_D) of approximately 3.5A per channel, making it suitable for a wide range of applications.
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R_DS(on): The on-resistance (R_DS(on)) is low, typically in the range of a few milliohms, which minimizes power loss during operation and improves overall efficiency.
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Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is designed to be low, allowing for easy drive with standard logic levels, which is beneficial for interfacing with microcontrollers and other digital logic devices.
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Thermal Performance: The device is designed to handle thermal dissipation effectively, with a maximum junction temperature rating that allows for reliable operation under various conditions.
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Applications: The DDTB142JU-7-F is ideal for applications such as DC-DC converters, load switches, and motor drivers, as well as in consumer electronics, automotive systems, and industrial equipment.
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RoHS Compliance: The component is RoHS compliant, ensuring that it meets environmental regulations regarding hazardous substances, making it suitable for use in eco-friendly designs.
Electrical Characteristics:
- V_DS (Max): 30V
- I_D (Max): 3.5A
- R_DS(on): Low, typically around 10-20 mΩ
- V_GS(th): Low, typically around 1-2V
Conclusion:
The DDTB142JU-7-F from Diodes Incorporated is a robust and efficient dual N-channel MOSFET that offers excellent performance in a compact package. Its combination of low on-resistance, high current handling capability, and versatility makes it a popular choice for engineers looking to optimize their designs for power efficiency and space savings.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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