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DF160R12W2H3F_B11
- Manufacturer's Part No.:DF160R12W2H3F_B11
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.DF160R12W2H3F_B11
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Modules
- Series-
- Maximum Collector-Emitter Voltage (V)1200
- MilitaryNo
- Minimum Operating Temperature (°C)-40
- Maximum Operating Temperature (°C)150
- Maximum Power Dissipation (mW)190000
- Supplier PackageEASY2B-2
- Package Length62.8
- Package Height12
- Package Width56.7
- PCB changed25
- ECCN (US)EAR99
- MountingScrew
- Part StatusActive
- PackagingTray
- Pin Count25
- ConfigurationQuad
- Channel TypeN
- AEC QualifiedNo
- Maximum Gate Emitter Voltage (V)±20
- Maximum Continuous Collector Current (A)20
- Maximum Gate Emitter Leakage Current (uA)0.1
- Typical Collector Emitter Saturation Voltage (V)1.55
Environmental & Export Classifications
- RoHS StatusYes with exemptions
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