DMC3018LSD-13
- Manufacturer's Part No.:DMC3018LSD-13
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET N/P-CH 30V 9.1A/6A 8-SOIC
- Datasheet:
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- Available: 13630
Reference Price(In US Dollars)
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Product Parameter
- ManufacturerDiodes Incorporated
- Manufacturer's Part No.DMC3018LSD-13
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Time@Peak Reflow Temperature-Max (s)40
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Part StatusObsolete
- Operating Temperature-55°C~150°C TJ
- Factory Lead Time21 Weeks
- MountSurface Mount
- Number of Pins8
- PackagingTape & Reel (TR)
- SubcategoryOther Transistors
- Number of Terminations8
- Terminal FinishMatte Tin (Sn)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Pin Count8
- Number of Elements2
- Radiation HardeningNo
- Published2011
- Pbfree Codeyes
- Additional FeatureHIGH RELIABILITY
- Height1.5mm
- Length5.3mm
- Width4.1mm
- Weight850.995985mg
- Max Power Dissipation2.5W
- Mounting TypeSurface Mount
- Transistor Element MaterialSILICON
- Transistor ApplicationSWITCHING
- Power Dissipation2.5W
- Operating ModeENHANCEMENT MODE
- Drain Current-Max (Abs) (ID)9.1A
- DS Breakdown Voltage-Min30V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Drain to Source Voltage (Vdss)30V
- Continuous Drain Current (ID)6A
- Gate to Source Voltage (Vgs)20V
- FET TypeN and P-Channel
- Vgs(th) (Max) @ Id2.1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds631pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs12.4nC @ 10V
- FET FeatureLogic Level Gate
- Current - Continuous Drain (Id) @ 25°C9.1A 6A
- Rds On (Max) @ Id, Vgs20m Ω @ 6.9A, 10V
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- REACH SVHCNo SVHC
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