DMG6602SVT-7
- Manufacturer's Part No.:DMG6602SVT-7
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET N/P-CH 30V TSOT23-6
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- In Stock: 5470
- Available: 885618
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $4.86000 | US $4.86 |
10+ | US $4.37400 | US $43.74 |
30+ | US $3.40200 | US $102.06 |
100+ | US $2.79450 | US $279.45 |
500+ | US $2.67300 | US $1336.50 |
1000+ | US $2.43000 | US $2430.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerDiodes Incorporated
- Manufacturer's Part No.DMG6602SVT-7
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- MountSurface Mount
- Width1.6mm
- Height1mm
- Length2.9mm
- FET TypeN and P-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count6
- Published2012
- Rise Time5ns
- Resistance95mOhm
- FET FeatureLogic Level Gate, 4.5V Drive
- Part StatusNot For New Designs
- Pbfree Codeyes
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins6
- Operating ModeENHANCEMENT MODE
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Fall Time (Typ)3 ns
- Terminal FinishMatte Tin (Sn)
- Base Part NumberDMG6602
- Power Dissipation840mW
- Terminal PositionDUAL
- Additional FeatureHIGH RELIABILITY
- Number of Elements2
- Turn On Delay Time3 ns
- Vgs(th) (Max) @ Id2.3V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time13 ns
- Max Power Dissipation840mW
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Number of Terminations6
- Rds On (Max) @ Id, Vgs60m Ω @ 3.1A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)40
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)3.4A
- Gate Charge (Qg) (Max) @ Vgs13nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)2.8A
- Max Junction Temperature (Tj)150°C
- Peak Reflow Temperature (Cel)260
- Pulsed Drain Current-Max (IDM)13A
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds400pF @ 15V
- Current - Continuous Drain (Id) @ 25°C3.4A 2.8A
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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