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DMG6602SVT-7

  • In Stock: 5470
  • Available: 885618

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $4.86000US $4.86
10+US $4.37400US $43.74
30+US $3.40200US $102.06
100+US $2.79450US $279.45
500+US $2.67300US $1336.50
1000+US $2.43000US $2430.00

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Product Parameter

  • Manufacturer
    Diodes Incorporated
  • Manufacturer's Part No.
    DMG6602SVT-7
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    1.6mm
  • Height
    1mm
  • Length
    2.9mm
  • FET Type
    N and P-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    6
  • Published
    2012
  • Rise Time
    5ns
  • Resistance
    95mOhm
  • FET Feature
    Logic Level Gate, 4.5V Drive
  • Part Status
    Not For New Designs
  • Pbfree Code
    yes
  • Subcategory
    Other Transistors
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    6
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Fall Time (Typ)
    3 ns
  • Terminal Finish
    Matte Tin (Sn)
  • Base Part Number
    DMG6602
  • Power Dissipation
    840mW
  • Terminal Position
    DUAL
  • Additional Feature
    HIGH RELIABILITY
  • Number of Elements
    2
  • Turn On Delay Time
    3 ns
  • Vgs(th) (Max) @ Id
    2.3V @ 250μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    13 ns
  • Max Power Dissipation
    840mW
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Number of Terminations
    6
  • Rds On (Max) @ Id, Vgs
    60m Ω @ 3.1A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    40
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    3.4A
  • Gate Charge (Qg) (Max) @ Vgs
    13nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    2.8A
  • Max Junction Temperature (Tj)
    150°C
  • Peak Reflow Temperature (Cel)
    260
  • Pulsed Drain Current-Max (IDM)
    13A
  • Drain to Source Breakdown Voltage
    30V
  • Input Capacitance (Ciss) (Max) @ Vds
    400pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    3.4A 2.8A

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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