DMG6968U-7
- Manufacturer's Part No.:DMG6968U-7
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- Description:SOT23-3 MOSFET RoHS
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- Quantity:Buy NowAdd to Cart
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- In Stock: 30000
- Available: 80
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.10197 | US $0.10 |
10+ | US $0.06798 | US $0.68 |
30+ | US $0.05099 | US $1.53 |
100+ | US $0.04079 | US $4.08 |
500+ | US $0.03739 | US $18.70 |
1000+ | US $0.03399 | US $33.99 |
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The DMG6968U-7 from VBsemi is a high-performance N-channel MOSFET designed for switching and amplification applications. This MOSFET offers low on-resistance and fast switching capabilities, making it suitable for high-efficiency and high-speed electronic circuits. It is housed in a compact SOT-23 package, which is ideal for space-constrained applications.
Features:
- Type: N-channel MOSFET, suitable for various switching and amplification tasks
- Maximum Drain-Source Voltage (Vds): 30V, allowing it to handle moderate voltage levels in electronic circuits
- Continuous Drain Current (Id): 4.5A, providing substantial current handling capability for power applications
- On-Resistance (Rds(on)): 0.05 Ω (typical) at Vgs = 10V, ensuring low power loss and efficient operation
- Gate-Source Voltage (Vgs): ±20V maximum, allowing for flexible gate drive requirements
- Total Gate Charge (Qg): 6.5 nC (typical), supporting fast switching speeds
- Package Type: SOT-23 (3-pin), compact and suitable for surface-mount technology (SMT) applications
- Power Dissipation (Pd): 1.25W, capable of handling moderate power levels
- Operating Temperature Range: -55°C to +150°C, ensuring reliable performance in various environmental conditions
- RoHS Compliant: Environmentally friendly, free from hazardous substances
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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