DMN10H220L-7

The DMN10H220L-7 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Diodes Incorporated. This component is designed for high-efficiency switching applications and is particularly suitable for power management in various electronic devices.

Key Features:

1. Type: N-channel MOSFET
2. Voltage Rating: The DMN10H220L-7 has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to medium voltage applications.
3. Current Rating: It can handle a continuous drain current (I_D) of up to 10A, which allows it to manage significant power loads effectively.
4. R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.022 ohms at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power loss during operation, enhancing efficiency.
5. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically between 1V to 3V, which allows for easy drive with standard logic levels.
6. Package Type: The DMN10H220L-7 is available in a compact SO-8 package, which is ideal for space-constrained applications. The small footprint also aids in thermal management.
7. Thermal Resistance: The device has a low thermal resistance, which helps in dissipating heat effectively during operation, ensuring reliability and longevity.
8. Applications: This MOSFET is commonly used in power management circuits, DC-DC converters, motor drivers, and other applications where efficient switching is required.

Electrical Characteristics:

• Maximum Gate-Source Voltage (V_GS): ±20V
• Maximum Power Dissipation (P_D): Typically around 1.5W, depending on the thermal conditions.
• Body Diode Characteristics: The DMN10H220L-7 features an intrinsic body diode, which allows for reverse current flow and can be beneficial in certain applications.

Performance:

The DMN10H220L-7 is designed for high-speed switching, making it suitable for applications that require rapid on/off control. Its low on-resistance and high current handling capabilities contribute to its efficiency, reducing heat generation and improving overall system performance.

Conclusion:

Overall, the DMN10H220L-7 from Diodes Incorporated is a versatile and efficient N-channel MOSFET that is well-suited for a variety of power management applications. Its combination of low on-resistance, high current capacity, and compact packaging makes it an excellent choice for engineers looking to optimize their designs for performance and efficiency.