DMN13H750S-7

The DMN13H750S-7 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Diodes Incorporated. This component is designed for high-efficiency switching applications and is particularly suitable for power management in various electronic devices.

Key Features:

1. Type: N-channel MOSFET
2. Voltage Rating: The DMN13H750S-7 has a maximum drain-source voltage (V_DS) of 75V, making it suitable for applications that require handling moderate to high voltage levels.
3. Current Rating: It can handle a continuous drain current (I_D) of up to 13A, which allows it to manage significant power loads effectively.
4. R_DS(on): The on-resistance (R_DS(on)) is typically low, around 10 mΩ at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses during operation, enhancing overall efficiency.
5. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically in the range of 2V to 4V, which indicates the voltage required to turn the MOSFET on. This feature allows for compatibility with various control circuits.
6. Package Type: The DMN13H750S-7 is available in a compact SO-8 package, which is suitable for surface mount applications. This package design helps save space on printed circuit boards (PCBs) and facilitates efficient thermal management.
7. Thermal Resistance: The device has a low thermal resistance, which aids in heat dissipation during operation, allowing for reliable performance under load.
8. Applications: It is commonly used in power supply circuits, motor control, LED drivers, and other applications where efficient switching is critical.

Electrical Characteristics:

• Maximum Gate-Source Voltage (V_GS): ±20V
• Maximum Power Dissipation (P_D): Typically around 40W, depending on the thermal management in the application.
• Operating Temperature Range: The device can operate in a wide temperature range, typically from -55°C to +150°C, making it suitable for various environmental conditions.

Summary:

The DMN13H750S-7 from Diodes Incorporated is a robust and efficient N-channel MOSFET that offers high voltage and current handling capabilities, low on-resistance, and a compact package design. Its features make it an excellent choice for a variety of power management applications, ensuring reliable performance and efficiency in electronic circuits.