DMP2165UW-7

The DMP2165UW-7 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Diodes Incorporated. This component is designed for high-efficiency power management applications, making it suitable for a variety of electronic devices and systems.

Key Features:

1. N-Channel Configuration: The DMP2165UW-7 is an N-channel MOSFET, which means it uses electrons as the charge carriers. This configuration typically offers lower on-resistance and higher efficiency compared to P-channel MOSFETs.

2. Voltage Rating: The device has a maximum drain-source voltage (V_DS) rating of 60V, allowing it to handle a wide range of applications, including power supplies and motor control circuits.

3. Current Rating: It can handle a continuous drain current (I_D) of up to 65A, making it suitable for high-current applications. This capability is essential for applications that require robust power handling.

4. On-Resistance: The DMP2165UW-7 features a low on-resistance (R_DS(on)) value, typically around 10 mΩ at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power loss during operation, enhancing overall efficiency.

5. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically in the range of 1V to 3V, which allows for easy driving with low-voltage control signals.

6. Package Type: The MOSFET is housed in a compact SO-8 package, which is surface-mountable. This package design is advantageous for space-constrained applications and provides good thermal performance.

7. Thermal Characteristics: The device is designed to operate efficiently at elevated temperatures, with a maximum junction temperature (T_J) rating of 150°C. This feature is crucial for applications that may experience high thermal loads.

8. Applications: The DMP2165UW-7 is suitable for a variety of applications, including:

   • DC-DC converters
   • Power management circuits
   • Motor drivers
   • Load switches
   • Battery management systems

Electrical Characteristics:

• V_DS (Max): 60V
• I_D (Max): 65A
• R_DS(on): ~10 mΩ at V_GS = 10V
• V_GS(th): 1V to 3V
• T_J (Max): 150°C

Conclusion:

The DMP2165UW-7 from Diodes Incorporated is a versatile and efficient N-channel MOSFET that is well-suited for high-performance power applications. Its combination of high current handling, low on-resistance, and compact packaging makes it an excellent choice for engineers looking to optimize their designs for efficiency and reliability.