DMPH6250SQ-7

The DMPH6250SQ-7 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Diodes Incorporated. This component is designed for a variety of applications, including power management, switching, and amplification in electronic circuits.

Key Features:

1. Type: N-channel MOSFET
2. Package: The DMPH6250SQ-7 is housed in a compact SO-8 (Small Outline 8-lead) package, which is ideal for space-constrained applications. The SO-8 package provides good thermal performance and is suitable for surface mount technology (SMT).
3. Voltage Rating: The device typically has a maximum drain-source voltage (V_DS) rating of around 25V, making it suitable for low to medium voltage applications.
4. Current Rating: It can handle a continuous drain current (I_D) of approximately 62A, depending on the thermal conditions and PCB layout, which allows it to drive significant loads.
5. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 10 mΩ at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses and improved efficiency in switching applications.
6. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically in the range of 1V to 3V, allowing for easy interfacing with low-voltage control signals.
7. Switching Speed: The DMPH6250SQ-7 features fast switching capabilities, making it suitable for high-frequency applications. This is particularly beneficial in power supply circuits and motor control applications.
8. Thermal Characteristics: The device has a maximum junction temperature (T_J) rating of 150°C, which allows for reliable operation in demanding environments. The SO-8 package also aids in heat dissipation.

Applications:

• Power Management: Ideal for DC-DC converters, battery management systems, and power distribution.
• Switching Applications: Used in load switching, relay replacement, and motor drivers.
• Consumer Electronics: Suitable for applications in laptops, tablets, and other portable devices where space and efficiency are critical.

Electrical Characteristics:

• Input Capacitance (C_iss): Typically around 2000 pF, which affects the drive requirements and switching speed.
• Output Capacitance (C_oss): Generally around 200 pF, influencing the overall switching performance.
• Reverse Recovery Time (t_rr): The device exhibits a low reverse recovery time, making it suitable for applications where fast switching is essential.

Conclusion:

The DMPH6250SQ-7 from Diodes Incorporated is a versatile and efficient N-channel MOSFET that meets the demands of modern electronic applications. Its combination of low on-resistance, high current handling capability, and compact packaging makes it an excellent choice for engineers looking to optimize performance in power management and switching applications.