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DRV5015A1QDBZR

  • In Stock: 185435
  • Available: 3000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.89010US $0.89
10+US $0.59340US $5.93
30+US $0.44505US $13.35
100+US $0.35604US $35.60
500+US $0.32637US $163.19
1000+US $0.29670US $296.70

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Description

The DRV5015A1QDBZR is a magnetic sensor integrated circuit (IC) produced by Texas Instruments. It is designed to detect magnetic fields and is particularly useful in applications such as position sensing, proximity detection, and other magnetic field-related functionalities.

Key Features:

  1. Type of Sensor: The DRV5015 is a Hall-effect sensor, which means it operates based on the Hall effect principle, where a voltage is generated in a conductor when it is exposed to a magnetic field.

  2. Operating Voltage: The device typically operates within a voltage range of 2.5V to 38V, making it versatile for various applications.

  3. Output Type: The DRV5015A1QDBZR features a digital output, which can be either a high or low signal depending on the presence of a magnetic field. This output is suitable for direct interfacing with microcontrollers and other digital logic devices.

  4. Sensitivity: The sensor is designed to detect both north and south poles of a magnetic field, providing flexibility in its application. The sensitivity can be adjusted based on the specific needs of the application.

  5. Package Type: The DRV5015A1QDBZR comes in a small, surface-mount package (QDBZ), which is ideal for space-constrained designs. The compact size allows for easy integration into various electronic systems.

  6. Temperature Range: The device is rated for operation over a wide temperature range, typically from -40°C to +125°C, ensuring reliable performance in harsh environments.

  7. Low Power Consumption: The sensor is designed to consume minimal power, making it suitable for battery-operated devices and applications where energy efficiency is critical.

  8. Applications: Common applications for the DRV5015A1QDBZR include automotive systems (like position sensing for doors and hoods), consumer electronics (such as smartphones and tablets for screen orientation), and industrial automation (for detecting the position of moving parts).

Additional Considerations:

  • Pin Configuration: The pin layout of the QDBZ package is designed for easy integration into PCB designs, with clearly defined pins for power, ground, and output signals.

  • Design Resources: Texas Instruments provides extensive documentation, including datasheets, application notes, and reference designs, to assist engineers in implementing the DRV5015A1QDBZR in their projects.

  • Reliability: The device is built to meet automotive-grade standards, ensuring high reliability and durability in demanding applications.

In summary, the DRV5015A1QDBZR from Texas Instruments is a highly versatile and reliable Hall-effect sensor suitable for a wide range of applications, characterized by its compact size, low power consumption, and robust performance across various environmental conditions.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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