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DRV5053RAQDBZR

  • In Stock: 4000
  • Available: 3000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.04625US $1.05
10+US $0.69750US $6.98
30+US $0.52313US $15.69
100+US $0.41850US $41.85
500+US $0.38363US $191.82
1000+US $0.34875US $348.75

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  • Description
  • Alternatives
  • Shopping Guide
Description

The DRV5053RAQDBZR is a magnetic sensor integrated circuit (IC) produced by Texas Instruments. It is designed to detect magnetic fields and is particularly useful in applications such as position sensing, proximity detection, and current sensing. Here’s a detailed description of its features and specifications:

General Features:

  • Type: Hall-effect sensor
  • Operating Voltage: The device typically operates within a voltage range of 2.7V to 38V, making it suitable for a variety of power supply configurations.
  • Output Type: The DRV5053 provides a linear analog output that varies with the strength of the magnetic field detected. This output can be used to determine the position or proximity of a magnetic object.

Sensitivity:

  • The sensor is available in different sensitivity options, allowing users to select the version that best fits their application needs. The sensitivity is typically specified in mV/G (millivolts per Gauss), indicating how much the output voltage changes per unit of magnetic field strength.

Package:

  • The DRV5053RAQDBZR comes in a small, surface-mount package (SOT-23), which is ideal for space-constrained applications. The compact size allows for easy integration into various electronic designs.

Temperature Range:

  • The device is designed to operate over a wide temperature range, typically from -40°C to +125°C, ensuring reliable performance in harsh environments.

Applications:

  • The DRV5053 is suitable for a variety of applications, including:
    • Automotive systems (e.g., position sensing for throttle and brake pedals)
    • Industrial automation (e.g., motor control and position feedback)
    • Consumer electronics (e.g., mobile devices and wearables)
    • Robotics (e.g., for detecting the position of moving parts)

Key Benefits:

  • Low Power Consumption: The sensor is designed to consume minimal power, making it suitable for battery-operated devices.
  • High Reliability: The Hall-effect technology is inherently robust and can operate in challenging conditions without mechanical wear.
  • Easy Integration: The linear output simplifies interfacing with microcontrollers and other processing units.

Additional Features:

  • The DRV5053 includes built-in protection against reverse polarity and overvoltage, enhancing its durability in various applications.
  • It also features a fast response time, allowing for quick detection of changes in the magnetic field.

In summary, the DRV5053RAQDBZR from Texas Instruments is a versatile and reliable Hall-effect sensor that offers a range of features suitable for various applications, particularly where magnetic field detection is required. Its compact size, low power consumption, and wide operating range make it an excellent choice for modern electronic designs.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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