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DRV5055A1QDBZT

  • In Stock: 80000
  • Available: 99902

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $38.84000US $38.84
10+US $29.13000US $291.30
30+US $25.24600US $757.38
100+US $22.33300US $2233.30
500+US $20.97360US $10486.80
1000+US $19.42000US $19420.00

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  • Description
  • Alternatives
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Description

The DRV5055A1QDBZT is a magnetic sensor integrated circuit (IC) produced by Texas Instruments. It is designed to detect magnetic fields and is particularly useful in applications such as position sensing, proximity detection, and current sensing. Here’s a detailed description of its features and specifications:

General Features:

  • Type: Hall Effect Sensor
  • Operating Voltage: The device typically operates within a voltage range of 2.7V to 38V, making it suitable for a variety of power supply configurations.
  • Output Type: The DRV5055A1QDBZT provides a linear analog output that varies with the strength of the magnetic field detected. This output can be used to determine the position or proximity of a magnetic object.

Sensitivity:

  • The sensor is designed to have a high sensitivity to magnetic fields, allowing it to detect small changes in magnetic flux. The sensitivity can be adjusted based on the application requirements.

Package:

  • The DRV5055A1QDBZT comes in a compact, surface-mount package (QFN-16), which is ideal for space-constrained applications. The small footprint allows for easy integration into various electronic designs.

Temperature Range:

  • The device is rated for operation over a wide temperature range, typically from -40°C to +125°C, ensuring reliable performance in harsh environmental conditions.

Applications:

  • The DRV5055A1QDBZT is suitable for a variety of applications, including:
    • Automotive systems (e.g., position sensing for throttle and brake pedals)
    • Industrial automation (e.g., motor control and position feedback)
    • Consumer electronics (e.g., mobile devices and wearables)
    • Robotics (e.g., for detecting the position of moving parts)

Key Benefits:

  • Low Power Consumption: The sensor is designed to operate efficiently, making it suitable for battery-powered applications.
  • Robustness: The Hall Effect technology provides a non-contact sensing solution, which enhances durability and reliability compared to mechanical switches.
  • Ease of Use: The linear output simplifies interfacing with microcontrollers and other processing units, facilitating easier integration into existing systems.

Electrical Characteristics:

  • The device features low noise and high linearity, ensuring accurate readings of the magnetic field strength.
  • It typically includes built-in protection features to safeguard against over-voltage and reverse polarity conditions.

Conclusion:

The DRV5055A1QDBZT from Texas Instruments is a versatile and reliable magnetic sensor that offers a range of features suitable for various applications. Its compact design, wide operating voltage, and robust performance make it an excellent choice for engineers looking to implement magnetic sensing solutions in their designs.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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