DRV5055A2QDBZR
- Manufacturer's Part No.:DRV5055A2QDBZR
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- Description:SENSOR HALL ANALOG SOT23-3
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- In Stock: 12100
- Available: 151819
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.63770 | US $1.64 |
10+ | US $1.09180 | US $10.92 |
30+ | US $0.81885 | US $24.57 |
100+ | US $0.65508 | US $65.51 |
500+ | US $0.60049 | US $300.25 |
1000+ | US $0.54590 | US $545.90 |
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- Description
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- Shopping Guide
The DRV5055A2QDBZR is a high-performance magnetic sensor from Texas Instruments, designed for various applications that require precise magnetic field detection. This device is part of the DRV5055 family of Hall-effect sensors, which are known for their reliability and accuracy in sensing magnetic fields.
Key Features:
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Type of Sensor: The DRV5055A2QDBZR is a linear Hall-effect sensor, which means it can detect the strength of a magnetic field and provide an output voltage that is proportional to that field.
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Output Type: It features an analog output, allowing for continuous voltage output that varies with the magnetic field strength. This is particularly useful in applications where precise measurements are necessary.
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Supply Voltage: The sensor operates within a supply voltage range of 4.5V to 38V, making it versatile for various power supply configurations.
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Sensitivity: The device has a high sensitivity, typically around 1.5 mV/G, which allows it to detect small changes in magnetic fields effectively.
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Temperature Range: The DRV5055A2QDBZR is designed to operate over a wide temperature range, typically from -40°C to +125°C, ensuring reliable performance in harsh environments.
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Package Type: It comes in a compact QFN (Quad Flat No-lead) package, specifically the 3mm x 3mm size, which is suitable for space-constrained applications.
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Low Power Consumption: The sensor is designed for low power consumption, making it ideal for battery-operated devices.
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Applications: The DRV5055A2QDBZR is suitable for a variety of applications, including:
- Position sensing
- Current sensing
- Proximity detection
- Automotive applications (e.g., wheel speed sensors, throttle position sensors)
- Industrial automation
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Built-in Protection: The device includes built-in protection features against reverse polarity and over-voltage, enhancing its durability and reliability in various operating conditions.
Performance Characteristics:
- Linearity: The output voltage is highly linear with respect to the magnetic field, ensuring accurate readings across the sensor's operating range.
- Response Time: The sensor has a fast response time, making it suitable for dynamic applications where quick detection of magnetic field changes is required.
Conclusion:
The DRV5055A2QDBZR from Texas Instruments is a robust and versatile magnetic sensor that offers high sensitivity, low power consumption, and a wide operating temperature range. Its analog output and compact package make it an excellent choice for a variety of applications in automotive, industrial, and consumer electronics.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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