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DRV5055A4QDBZR

  • In Stock: 50940
  • Available: 4000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.36950US $1.37
10+US $0.91300US $9.13
30+US $0.68475US $20.54
100+US $0.54780US $54.78
500+US $0.50215US $251.08
1000+US $0.45650US $456.50

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Description

The DRV5055A4QDBZR is a magnetic sensor integrated circuit (IC) produced by Texas Instruments. It is designed to detect magnetic fields and is particularly useful in applications such as position sensing, proximity detection, and current sensing. Here’s a detailed description of its features and specifications:

General Features:

  • Type: Hall-effect sensor
  • Operating Voltage: Typically operates within a voltage range of 2.7V to 38V, making it suitable for a variety of power supply configurations.
  • Output Type: The DRV5055 provides a linear analog output that varies with the strength of the magnetic field detected. This output can be used to determine the position or proximity of a magnetic object.

Sensitivity:

  • The sensor is designed to have a high sensitivity to magnetic fields, allowing it to detect small changes in magnetic flux. The sensitivity can be adjusted based on the application requirements.

Package:

  • The DRV5055A4QDBZR comes in a compact, surface-mount package (QFN-16), which is ideal for space-constrained applications. The small footprint allows for easy integration into various electronic designs.

Temperature Range:

  • The device operates effectively over a wide temperature range, typically from -40°C to +125°C, ensuring reliable performance in diverse environmental conditions.

Applications:

  • The DRV5055 is suitable for a variety of applications, including:
    • Automotive systems (e.g., position sensing for throttle and brake pedals)
    • Industrial automation (e.g., proximity sensing in machinery)
    • Consumer electronics (e.g., mobile devices for orientation detection)
    • Robotics (e.g., for detecting the position of moving parts)

Electrical Characteristics:

  • The sensor features low power consumption, making it suitable for battery-operated devices. It also has a fast response time, allowing for real-time detection of magnetic field changes.

Design Considerations:

  • When designing with the DRV5055, engineers should consider the layout of the PCB to minimize interference from other components and ensure optimal performance. Proper placement of the sensor relative to the magnetic source is crucial for accurate readings.

Conclusion:

The DRV5055A4QDBZR from Texas Instruments is a versatile and reliable magnetic sensor that offers a combination of high sensitivity, low power consumption, and a wide operating voltage range. Its compact design and robust performance make it an excellent choice for a variety of applications in both consumer and industrial markets.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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