DSEI2X61-12B

The DSEI2X61-12B is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by IXYS, designed for various applications in power electronics. This device is particularly suited for high-voltage and high-current applications, making it ideal for use in power supplies, motor drives, and other industrial applications.

Key Features:

1. Voltage Rating: The DSEI2X61-12B has a maximum drain-source voltage (V_DS) rating of 1200V, allowing it to handle high-voltage applications effectively.

2. Current Rating: It can handle a continuous drain current (I_D) of up to 61A, which makes it suitable for applications requiring significant power handling capabilities.

3. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.15 ohms, which minimizes power losses during operation and enhances efficiency.

4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is designed to be low, typically in the range of 2-4V, allowing for easy drive with standard logic levels.

5. Package Type: The DSEI2X61-12B is housed in a TO-220 package, which provides good thermal performance and allows for easy mounting to heatsinks for effective heat dissipation.

6. Thermal Resistance: The thermal resistance from junction to case (RθJC) is low, ensuring that the device can operate at high temperatures without compromising performance.

7. Switching Speed: The device is designed for fast switching applications, making it suitable for high-frequency operation in switching power supplies and converters.

8. Robustness: The DSEI2X61-12B features built-in protection against over-voltage and over-current conditions, enhancing its reliability in demanding environments.

Applications:

• Power Supplies: Used in both AC-DC and DC-DC converters for efficient power conversion.
• Motor Drives: Suitable for driving electric motors in industrial and automotive applications.
• Inverters: Commonly used in solar inverters and UPS systems for converting DC to AC power.
• Switching Regulators: Employed in various types of switching regulators for efficient voltage regulation.

Electrical Characteristics:

• Maximum Gate-Source Voltage (V_GS): ±20V
• Maximum Pulsed Drain Current (I_D,pulse): Higher than the continuous rating, allowing for transient conditions.
• Junction Temperature (T_j): Can operate at high junction temperatures, typically up to 150°C.

Conclusion:

The DSEI2X61-12B from IXYS is a versatile and robust power MOSFET that combines high voltage and current ratings with low on-resistance and fast switching capabilities. Its design makes it an excellent choice for a wide range of power electronic applications, ensuring efficiency and reliability in demanding conditions.