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DSEI30-12A

  • In Stock: 2020
  • Available: 25481

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $4.12000US $4.12
10+US $3.70800US $37.08
30+US $2.88400US $86.52
100+US $2.36900US $236.90
500+US $2.26600US $1133.00
1000+US $2.06000US $2060.00

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  • Description
  • Alternatives
  • Shopping Guide
Description

The DSEI30-12A is a high-performance, N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by IXYS, designed for various power applications. This device is particularly well-suited for use in power management, switching applications, and in circuits requiring high efficiency and reliability.

Key Features:

  1. Voltage Rating: The DSEI30-12A has a maximum drain-source voltage (V_DS) of 1200 volts, making it suitable for high-voltage applications.

  2. Current Rating: It can handle a continuous drain current (I_D) of up to 30 amperes, which allows it to manage significant power loads effectively.

  3. R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.15 ohms at a gate-source voltage (V_GS) of 10 volts. This low on-resistance contributes to reduced power losses during operation, enhancing overall efficiency.

  4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2 to 4 volts, which allows for easy driving with standard logic levels.

  5. Package Type: The DSEI30-12A is typically housed in a TO-220 package, which provides good thermal performance and allows for easy mounting to heatsinks for effective heat dissipation.

  6. Thermal Characteristics: The device has a maximum junction temperature (T_j) of 150°C, which provides a robust operating range for demanding applications.

  7. Switching Performance: The DSEI30-12A is designed for fast switching, making it ideal for applications such as DC-DC converters, motor drives, and other power electronics where rapid switching is essential.

  8. Applications: Common applications include power supplies, inverters, and other circuits where high efficiency and reliability are critical. It is also used in automotive applications, renewable energy systems, and industrial equipment.

Electrical Characteristics:

  • Input Capacitance (C_iss): Typically around 1,200 pF, which affects the switching speed and drive requirements.
  • Output Capacitance (C_oss): Approximately 200 pF, influencing the device's performance in high-frequency applications.
  • Reverse Recovery: The DSEI30-12A exhibits minimal reverse recovery characteristics, making it suitable for synchronous rectification and other applications where fast recovery is necessary.

Conclusion:

The DSEI30-12A from IXYS is a versatile and efficient N-channel MOSFET that meets the demands of modern power electronics. Its high voltage and current ratings, combined with low on-resistance and fast switching capabilities, make it an excellent choice for a wide range of applications in both industrial and consumer electronics.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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