DSEI60-12A
- Manufacturer's Part No.:DSEI60-12A
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- Description:DIODE GEN PURP 1.2KV 52A TO247AD
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- In Stock: 33060
- Available: 16611
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.52000 | US $2.52 |
10+ | US $2.26800 | US $22.68 |
30+ | US $1.76400 | US $52.92 |
100+ | US $1.44900 | US $144.90 |
500+ | US $1.38600 | US $693.00 |
1000+ | US $1.26000 | US $1260.00 |
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- Description
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- Shopping Guide
The DSEI60-12A is a high-performance, insulated gate bipolar transistor (IGBT) manufactured by IXYS, designed for various applications in power electronics. This device is particularly suited for use in industrial motor drives, power inverters, and other high-efficiency power conversion systems.
Key Features:
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Voltage Rating: The DSEI60-12A has a maximum collector-emitter voltage (V_CE) of 1200 volts, making it suitable for high-voltage applications.
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Current Rating: It can handle a continuous collector current (I_C) of up to 60 amperes, which allows it to manage significant power loads effectively.
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Switching Speed: The IGBT is designed for fast switching capabilities, which enhances its efficiency in applications requiring rapid on-off control.
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Thermal Performance: The device features a low thermal resistance, which helps in maintaining lower junction temperatures during operation. This is crucial for reliability and longevity in demanding environments.
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Package Type: The DSEI60-12A is typically housed in a robust package that facilitates efficient heat dissipation. The package design also allows for easy mounting on heatsinks, ensuring optimal thermal management.
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Gate Drive Requirements: The IGBT has a gate threshold voltage that allows for easy interfacing with standard gate drive circuits, making it user-friendly for designers.
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Robustness: The DSEI60-12A is designed to withstand harsh operating conditions, including high temperatures and electrical stresses, which is essential for industrial applications.
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Applications: Common applications include motor control, induction heating, and renewable energy systems such as solar inverters and wind turbine converters.
Electrical Characteristics:
- Collector-Emitter Saturation Voltage (V_CE(sat)): This parameter indicates the voltage drop across the device when it is in the 'on' state, which is typically low, contributing to higher efficiency.
- Turn-On and Turn-Off Times: The switching times are optimized for fast operation, which is critical in applications where efficiency and response time are paramount.
Conclusion:
The DSEI60-12A from IXYS is a versatile and reliable IGBT that combines high voltage and current ratings with excellent thermal performance and fast switching capabilities. Its robust design makes it an ideal choice for a wide range of power electronics applications, ensuring efficient operation and durability in demanding environments.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
SHIPPING GUIDE
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