DTD123YKT146
- Manufacturer's Part No.:DTD123YKT146
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- Description:TRANS PREBIAS NPN 200MW SMT3
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- In Stock: 1070488
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Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.27300 | US $0.27 |
10+ | US $0.18200 | US $1.82 |
30+ | US $0.13650 | US $4.10 |
100+ | US $0.10920 | US $10.92 |
500+ | US $0.10010 | US $50.05 |
1000+ | US $0.09100 | US $91.00 |
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The DTD123YKT146 is a specific type of transistor manufactured by Rohm Semiconductor, designed for various electronic applications. Here’s a detailed description of its features and specifications:
General Overview
The DTD123YKT146 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is commonly used in power management and switching applications. It is known for its high efficiency, low on-resistance, and fast switching capabilities, making it suitable for a wide range of electronic devices.
Key Features
- Type: N-channel MOSFET
- Package: Typically available in a compact surface-mount package, which allows for efficient use of PCB space and improved thermal performance.
- Voltage Rating: The DTD123YKT146 can handle a maximum drain-source voltage (V_DS) of around 30V, making it suitable for low to medium voltage applications.
- Current Rating: It can support a continuous drain current (I_D) of approximately 10A, which is ideal for driving loads in various circuits.
- On-Resistance (R_DS(on)): The on-resistance is low, typically in the range of a few milliohms, which minimizes power loss during operation and enhances efficiency.
- Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is designed to be low, allowing the transistor to turn on with a relatively low gate voltage, which is beneficial for battery-operated devices.
Electrical Characteristics
- Input Capacitance (C_iss): The input capacitance is moderate, which contributes to the fast switching speed of the device.
- Output Capacitance (C_oss): The output capacitance is also optimized for quick response times, making it suitable for high-frequency applications.
- Reverse Recovery Time (t_rr): The device features a fast reverse recovery time, which is crucial for applications involving inductive loads.
Applications
The DTD123YKT146 is widely used in:
- Power Supply Circuits: For switching regulators and DC-DC converters.
- Motor Control: In applications requiring efficient control of DC motors.
- LED Drivers: For driving LED arrays with high efficiency.
- Battery Management Systems: In portable devices to manage power distribution effectively.
Thermal Characteristics
- Thermal Resistance: The device has a low thermal resistance, allowing for effective heat dissipation during operation, which is critical for maintaining performance and reliability.
- Operating Temperature Range: It can operate within a wide temperature range, making it suitable for various environmental conditions.
Conclusion
The DTD123YKT146 from Rohm Semiconductor is a versatile and efficient N-channel MOSFET that meets the demands of modern electronic applications. Its combination of low on-resistance, high current handling capability, and fast switching performance makes it an excellent choice for engineers looking to optimize their designs for efficiency and reliability.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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