DTD143ECHZGT116

The DTD143ECHZGT116 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Rohm Semiconductor. This device is designed for various applications, including power management, switching, and amplification in electronic circuits.

Key Features:

1. Type: N-channel MOSFET
2. Package: The DTD143ECHZGT116 is typically housed in a compact surface-mount package, which allows for efficient thermal management and space-saving on printed circuit boards (PCBs).
3. Voltage Rating: It has a maximum drain-source voltage (V_DS) rating, which allows it to handle high voltages, making it suitable for applications that require robust performance under varying electrical conditions.
4. Current Rating: The device can handle significant continuous drain current (I_D), which is essential for applications that demand high power levels.
5. R_DS(on): The on-resistance (R_DS(on)) is low, which minimizes power loss during operation and enhances efficiency, particularly in switching applications.
6. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is optimized for low-voltage drive applications, allowing for easy interfacing with microcontrollers and other logic devices.
7. Switching Speed: The DTD143ECHZGT116 features fast switching capabilities, making it ideal for high-frequency applications, such as DC-DC converters and motor drivers.
8. Thermal Performance: The device is designed to operate efficiently at elevated temperatures, with a specified maximum junction temperature, ensuring reliability in demanding environments.

Applications:

• Power Supply Circuits: Used in DC-DC converters, power management systems, and battery management systems.
• Motor Control: Suitable for driving motors in various applications, including robotics and industrial automation.
• LED Drivers: Can be utilized in LED lighting applications for efficient power control.
• Consumer Electronics: Employed in devices requiring efficient power switching and management.

Electrical Characteristics:

• Maximum Drain-Source Voltage (V_DS): Typically rated in the range of 30V to 40V.
• Continuous Drain Current (I_D): Can handle currents in the range of several amperes, depending on the thermal conditions.
• Gate-Source Voltage (V_GS): The maximum gate-source voltage is usually around ±20V.

Conclusion:

The DTD143ECHZGT116 from Rohm Semiconductor is a versatile and efficient N-channel MOSFET that is well-suited for a wide range of applications requiring reliable power management and switching capabilities. Its combination of low on-resistance, high current handling, and fast switching speeds makes it an excellent choice for modern electronic designs.