EMD5DXV6T1
- Manufacturer's Part No.:EMD5DXV6T1
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- Sub-Categories:
- Series:-
- Description:TRANS PREBIAS NPN/PNP SOT563
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- Available: 6921
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.00000 | US $0.00 |
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Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.EMD5DXV6T1
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - Bipolar (BJT) - Arrays, Pre-Biased
- Series-
- Time@Peak Reflow Temperature-Max (s)40
- Package / CaseSOT-563, SOT-666
- Part StatusObsolete
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- Number of Pins6
- PackagingTape & Reel (TR)
- SubcategoryBIP General Purpose Small Signal
- Surface MountYES
- Number of Terminations6
- Terminal FinishTin (Sn)
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Pin Count6
- Qualification StatusNot Qualified
- Number of Elements2
- Lead FreeLead Free
- Published2009
- Pbfree Codeyes
- Current Rating100mA
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 2.13
- Voltage - Rated DC50V
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Max Power Dissipation500mW
- Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
- Resistor - Base (R1)4.7k Ω, 47k Ω
- Resistor - Emitter Base (R2)10k Ω, 47k Ω
- Current - Collector Cutoff (Max)500nA
- Mounting TypeSurface Mount
- PolarityNPN
- Element ConfigurationDual
- Transistor ApplicationSWITCHING
- Collector Emitter Voltage (VCEO)250mV
- Max Collector Current100mA
- Collector Emitter Breakdown Voltage50V
- hFE Min20
- Continuous Collector Current100mA
- Power Dissipation357mW
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA 10V / 20 @ 5mA 10V
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusNon-RoHS Compliant
- JESD-609 Codee3
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