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EPC2016C
- Manufacturer's Part No.:EPC2016C
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:eGaN®
- Description:GANFET TRANS 100V 18A BUMPED DIE
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- Available: 397500
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.22750 | US $2.23 |
10+ | US $2.00475 | US $20.05 |
30+ | US $1.55925 | US $46.78 |
100+ | US $1.28081 | US $128.08 |
500+ | US $1.22513 | US $612.57 |
1000+ | US $1.11375 | US $1113.75 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerEPC
- Manufacturer's Part No.EPC2016C
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SerieseGaN®
- ECCNEAR99
- MountSurface Mount
- Height815μm
- FET TypeN-Channel
- PackagingTape & Reel (TR)
- Published2012
- Vgs (Max)+6V, -4V
- Rds On Max16 mΩ
- TechnologyGaNFET (Gallium Nitride)
- Part StatusActive
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Package / CaseDie
- Factory Lead Time12 Weeks
- Input Capacitance420pF
- Number of Channels1
- Vgs(th) (Max) @ Id2.5V @ 3mA
- Operating Temperature-40°C~150°C TJ
- Rds On (Max) @ Id, Vgs16mOhm @ 11A, 5V
- Supplier Device PackageDie
- Max Operating Temperature150°C
- Min Operating Temperature-40°C
- Drain to Source Resistance12mOhm
- Gate Charge (Qg) (Max) @ Vgs4.5nC @ 5V
- Gate to Source Voltage (Vgs)6V
- Continuous Drain Current (ID)18A
- Max Junction Temperature (Tj)150°C
- Drain to Source Voltage (Vdss)100V
- Drain to Source Breakdown Voltage100V
- Input Capacitance (Ciss) (Max) @ Vds420pF @ 50V
- Drive Voltage (Max Rds On,Min Rds On)5V
- Current - Continuous Drain (Id) @ 25°C18A Ta
Environmental & Export Classifications
- HTSUS8541.29.0040
- RoHS StatusROHS3 Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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