FCH023N65S3-F155

The FCH023N65S3-F155 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. This device is designed for applications requiring high efficiency and fast switching speeds, making it suitable for power management, DC-DC converters, and other high-frequency applications.

Key Features:

1. Voltage Rating: The FCH023N65S3-F155 has a maximum drain-source voltage (V_DS) of 650V, allowing it to handle high-voltage applications effectively.

2. Current Rating: It can handle a continuous drain current (I_D) of up to 23A at a specified temperature, making it capable of managing significant power loads.

3. R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.23 ohms at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced conduction losses and improved efficiency in power applications.

4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically in the range of 2V to 4V, which allows for easy drive with standard logic levels.

5. Fast Switching: The FCH023N65S3-F155 is designed for fast switching applications, with low gate charge (Q_g) values, which helps in reducing switching losses and improving overall efficiency.

6. Thermal Performance: The device features a robust thermal design, with a maximum junction temperature (T_j) of 150°C, allowing it to operate reliably in high-temperature environments.

7. Package Type: The MOSFET is typically housed in a TO-220 package, which provides good thermal dissipation characteristics and is suitable for mounting on heatsinks.

8. Applications: This MOSFET is ideal for use in various applications, including:

   • Power supplies
   • Motor drives
   • Solar inverters
   • UPS systems
   • High-frequency switching applications

Electrical Characteristics:

• Maximum Gate-Source Voltage (V_GS): ±20V
• Total Gate Charge (Q_g): Approximately 30 nC, which indicates the amount of charge required to turn the MOSFET on and off.
• Body Diode Characteristics: The device includes an intrinsic body diode, which can conduct in the reverse direction, providing additional functionality in certain applications.

Conclusion:

The FCH023N65S3-F155 from ON Semiconductor is a versatile and efficient N-channel MOSFET that meets the demands of modern power electronics. Its high voltage and current ratings, combined with low on-resistance and fast switching capabilities, make it an excellent choice for a wide range of applications in the power management sector.