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FDA70N20

  • In Stock: 900
  • Available: 21399

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $4.04584US $4.05
10+US $3.64126US $36.41
30+US $2.83209US $84.96
100+US $2.32636US $232.64
500+US $2.22521US $1112.61
1000+US $2.02292US $2022.92

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  • Description
  • Alternatives
  • Shopping Guide
Description

The FDA70N20 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. This device is designed for applications requiring efficient power management and switching capabilities.

Key Features:

  1. Voltage Rating: The FDA70N20 has a maximum drain-source voltage (V_DS) of 200V, making it suitable for high-voltage applications.

  2. Current Rating: It can handle a continuous drain current (I_D) of up to 70A, which allows it to manage significant power loads effectively.

  3. R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.1 ohms at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power loss during operation, enhancing efficiency.

  4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2V to 4V, which allows for easy drive with standard logic levels.

  5. Package Type: The FDA70N20 is available in a TO-220 package, which provides good thermal performance and is suitable for heat dissipation in high-power applications.

  6. Thermal Characteristics: The device has a high maximum junction temperature (T_J) rating, typically up to 150°C, allowing it to operate in demanding environments.

  7. Switching Speed: The FDA70N20 features fast switching capabilities, making it ideal for applications such as DC-DC converters, motor drives, and power inverters.

  8. Applications: Common applications include power supplies, automotive systems, and industrial equipment where efficient power management is critical.

Electrical Characteristics:

  • Gate-Source Voltage (V_GS): Maximum rating of ±20V.
  • Drain-Source Breakdown Voltage (V(BR)DSS): 200V minimum.
  • Total Gate Charge (Q_g): Typically around 60 nC, which indicates the amount of charge required to turn the device on and off.

Performance:

The FDA70N20 is designed to provide high efficiency and reliability in power applications. Its low on-resistance and high current handling capabilities make it an excellent choice for reducing heat generation and improving overall system performance.

Conclusion:

Overall, the FDA70N20 from ON Semiconductor is a robust and efficient N-channel MOSFET that is well-suited for a variety of high-power applications. Its combination of high voltage and current ratings, low on-resistance, and fast switching speeds make it a valuable component in modern electronic designs.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

SHIPPING GUIDE

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