FDA70N20
- Manufacturer's Part No.:FDA70N20
- Manufacturer:
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- Series:UniFET™
- Description:MOSFET N-CH 200V 70A TO-3P
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- Quantity:Buy NowAdd to Cart
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- In Stock: 900
- Available: 21399
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $4.04584 | US $4.05 |
10+ | US $3.64126 | US $36.41 |
30+ | US $2.83209 | US $84.96 |
100+ | US $2.32636 | US $232.64 |
500+ | US $2.22521 | US $1112.61 |
1000+ | US $2.02292 | US $2022.92 |
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- Description
- Alternatives
- Shopping Guide
The FDA70N20 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. This device is designed for applications requiring efficient power management and switching capabilities.
Key Features:
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Voltage Rating: The FDA70N20 has a maximum drain-source voltage (V_DS) of 200V, making it suitable for high-voltage applications.
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Current Rating: It can handle a continuous drain current (I_D) of up to 70A, which allows it to manage significant power loads effectively.
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R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.1 ohms at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power loss during operation, enhancing efficiency.
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Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2V to 4V, which allows for easy drive with standard logic levels.
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Package Type: The FDA70N20 is available in a TO-220 package, which provides good thermal performance and is suitable for heat dissipation in high-power applications.
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Thermal Characteristics: The device has a high maximum junction temperature (T_J) rating, typically up to 150°C, allowing it to operate in demanding environments.
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Switching Speed: The FDA70N20 features fast switching capabilities, making it ideal for applications such as DC-DC converters, motor drives, and power inverters.
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Applications: Common applications include power supplies, automotive systems, and industrial equipment where efficient power management is critical.
Electrical Characteristics:
- Gate-Source Voltage (V_GS): Maximum rating of ±20V.
- Drain-Source Breakdown Voltage (V(BR)DSS): 200V minimum.
- Total Gate Charge (Q_g): Typically around 60 nC, which indicates the amount of charge required to turn the device on and off.
Performance:
The FDA70N20 is designed to provide high efficiency and reliability in power applications. Its low on-resistance and high current handling capabilities make it an excellent choice for reducing heat generation and improving overall system performance.
Conclusion:
Overall, the FDA70N20 from ON Semiconductor is a robust and efficient N-channel MOSFET that is well-suited for a variety of high-power applications. Its combination of high voltage and current ratings, low on-resistance, and fast switching speeds make it a valuable component in modern electronic designs.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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