FDB52N20TM

The FDB52N20TM is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. This device is designed for applications requiring efficient power management and switching capabilities. Below is a detailed description of its key features and specifications:

Key Features:

1. N-Channel Configuration: The FDB52N20TM is an N-channel MOSFET, which means it uses electrons as the charge carriers, providing high conductivity and efficiency.

2. Voltage Rating: The device has a maximum drain-source voltage (V_DS) of 200V, making it suitable for high-voltage applications.

3. Current Rating: It can handle a continuous drain current (I_D) of up to 52A at a specified temperature, allowing it to manage significant power loads.

4. R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.08 ohms at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses during operation.

5. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically in the range of 2V to 4V, which allows for easy drive with standard logic levels.

6. Thermal Performance: The FDB52N20TM features a robust thermal performance with a maximum junction temperature (T_J) of 150°C. It is packaged in a TO-220 form factor, which aids in effective heat dissipation.

7. Fast Switching Speed: The device is designed for fast switching applications, making it suitable for use in power supplies, motor drives, and other high-frequency applications.

8. Package Type: The TO-220 package provides a sturdy and reliable physical structure, allowing for easy mounting on heatsinks and ensuring good thermal management.

9. Applications: Common applications include DC-DC converters, power inverters, and other power management systems where high efficiency and reliability are critical.

Electrical Characteristics:

• Maximum Drain-Source Voltage (V_DS): 200V
• Continuous Drain Current (I_D): 52A
• Pulsed Drain Current (I_DM): 100A
• Gate-Source Voltage (V_GS): ±20V
• On-Resistance (R_DS(on)): 0.08Ω (typical at V_GS = 10V)
• Gate Threshold Voltage (V_GS(th)): 2V to 4V

Conclusion:

The FDB52N20TM from ON Semiconductor is a versatile and efficient N-channel MOSFET that is well-suited for a variety of high-power applications. Its combination of high voltage and current ratings, low on-resistance, and fast switching capabilities make it an excellent choice for engineers looking to optimize power management in their designs.