FDC6301N
- Manufacturer's Part No.:FDC6301N
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET 2N-CH 25V 0.22A SSOT6
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 5050
- Available: 746736
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.37000 | US $2.37 |
10+ | US $1.58000 | US $15.80 |
30+ | US $1.18500 | US $35.55 |
100+ | US $0.94800 | US $94.80 |
500+ | US $0.86900 | US $434.50 |
1000+ | US $0.79000 | US $790.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.FDC6301N
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- MountSurface Mount
- Width1.7mm
- Height1mm
- Length3mm
- Weight36mg
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published1997
- Rise Time4.5ns
- Resistance4Ohm
- FET FeatureLogic Level Gate
- Nominal Vgs850 mV
- Part StatusActive
- Pbfree Codeyes
- Power - Max700mW
- SubcategoryFET General Purpose Power
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating220mA
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins6
- Operating ModeENHANCEMENT MODE
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Contact PlatingTin
- Fall Time (Typ)4.5 ns
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time10 Weeks
- Power Dissipation900mW
- Threshold Voltage850mV
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Number of Elements2
- Turn On Delay Time5 ns
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Voltage - Rated DC25V
- Dual Supply Voltage25V
- Radiation HardeningNo
- Turn-Off Delay Time4 ns
- Element ConfigurationDual
- Max Power Dissipation900mW
- Operating Temperature-55°C~150°C TJ
- Number of Terminations6
- Rds On (Max) @ Id, Vgs4 Ω @ 400mA, 4.5V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs0.7nC @ 4.5V
- Gate to Source Voltage (Vgs)8V
- Continuous Drain Current (ID)220mA
- Drain to Source Breakdown Voltage25V
- Input Capacitance (Ciss) (Max) @ Vds9.5pF @ 10V
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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