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FDC6301N

  • In Stock: 5050
  • Available: 746736

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.37000US $2.37
10+US $1.58000US $15.80
30+US $1.18500US $35.55
100+US $0.94800US $94.80
500+US $0.86900US $434.50
1000+US $0.79000US $790.00

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    FDC6301N
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    -
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    1.7mm
  • Height
    1mm
  • Length
    3mm
  • Weight
    36mg
  • FET Type
    2 N-Channel (Dual)
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Published
    1997
  • Rise Time
    4.5ns
  • Resistance
    4Ohm
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    850 mV
  • Part Status
    Active
  • Pbfree Code
    yes
  • Power - Max
    700mW
  • Subcategory
    FET General Purpose Power
  • Termination
    SMD/SMT
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Current Rating
    220mA
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    6
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Contact Plating
    Tin
  • Fall Time (Typ)
    4.5 ns
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    10 Weeks
  • Power Dissipation
    900mW
  • Threshold Voltage
    850mV
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Number of Elements
    2
  • Turn On Delay Time
    5 ns
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Voltage - Rated DC
    25V
  • Dual Supply Voltage
    25V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    4 ns
  • Element Configuration
    Dual
  • Max Power Dissipation
    900mW
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    6
  • Rds On (Max) @ Id, Vgs
    4 Ω @ 400mA, 4.5V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    0.7nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    8V
  • Continuous Drain Current (ID)
    220mA
  • Drain to Source Breakdown Voltage
    25V
  • Input Capacitance (Ciss) (Max) @ Vds
    9.5pF @ 10V

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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