FDC6303N
- Manufacturer's Part No.:FDC6303N
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET 2N-CH 25V 0.68A SSOT6
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 600000
- Available: 574419
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.33400 | US $2.33 |
10+ | US $2.10060 | US $21.01 |
30+ | US $1.63380 | US $49.01 |
100+ | US $1.34205 | US $134.20 |
500+ | US $1.28370 | US $641.85 |
1000+ | US $1.16700 | US $1167.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.FDC6303N
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- MountSurface Mount
- Width1.7mm
- Height1.1mm
- Length3mm
- Weight36mg
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published1997
- Rise Time8.5ns
- Resistance450mOhm
- FET FeatureLogic Level Gate
- Nominal Vgs800 mV
- Part StatusActive
- Pbfree Codeyes
- Power - Max700mW
- SubcategoryFET General Purpose Power
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating680mA
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins6
- Operating ModeENHANCEMENT MODE
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Fall Time (Typ)13 ns
- Terminal FinishTin (Sn)
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time10 Weeks
- Power Dissipation900mW
- Threshold Voltage800mV
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Number of Channels2
- Number of Elements2
- Turn On Delay Time3 ns
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Voltage - Rated DC25V
- Dual Supply Voltage25V
- Radiation HardeningNo
- Turn-Off Delay Time17 ns
- Element ConfigurationDual
- Max Power Dissipation900mW
- Operating Temperature-55°C~150°C TJ
- Number of Terminations6
- Rds On (Max) @ Id, Vgs450m Ω @ 500mA, 4.5V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs2.3nC @ 4.5V
- Gate to Source Voltage (Vgs)8V
- Continuous Drain Current (ID)680mA
- Max Junction Temperature (Tj)150°C
- Drain to Source Breakdown Voltage25V
- Input Capacitance (Ciss) (Max) @ Vds50pF @ 10V
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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