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FDC6312P

  • In Stock: 280759
  • Available: 590450

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.93000US $0.93
10+US $0.62000US $6.20
30+US $0.46500US $13.95
100+US $0.37200US $37.20
500+US $0.34100US $170.50
1000+US $0.31000US $310.00

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    FDC6312P
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    PowerTrench®
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Part Status
    Active
  • Operating Temperature
    -55°C~150°C TJ
  • Factory Lead Time
    10 Weeks
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Mount
    Surface Mount
  • Number of Pins
    6
  • Packaging
    Tape & Reel (TR)
  • Subcategory
    Other Transistors
  • Number of Terminations
    6
  • Terminal Finish
    Tin (Sn)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Lead Free
    Lead Free
  • Published
    2001
  • Pbfree Code
    yes
  • Current Rating
    -2.3A
  • Voltage - Rated DC
    -20V
  • Height
    1.1mm
  • Length
    3mm
  • Width
    1.7mm
  • Weight
    36mg
  • Max Power Dissipation
    960mW
  • Power - Max
    700mW
  • Mounting Type
    Surface Mount
  • Transistor Element Material
    SILICON
  • Element Configuration
    Dual
  • Transistor Application
    SWITCHING
  • Termination
    SMD/SMT
  • Power Dissipation
    960mW
  • Max Junction Temperature (Tj)
    150°C
  • Number of Channels
    2
  • Turn On Delay Time
    8 ns
  • Turn-Off Delay Time
    18 ns
  • Operating Mode
    ENHANCEMENT MODE
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Drain to Source Voltage (Vdss)
    20V
  • Continuous Drain Current (ID)
    2.3A
  • Resistance
    115MOhm
  • Gate to Source Voltage (Vgs)
    8V
  • Drain to Source Breakdown Voltage
    -20V
  • Threshold Voltage
    -900mV
  • FET Type
    2 P-Channel (Dual)
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    467pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    7nC @ 4.5V
  • FET Feature
    Logic Level Gate
  • Rise Time
    13ns
  • Fall Time (Typ)
    13 ns
  • Nominal Vgs
    -900 mV
  • Dual Supply Voltage
    -20V
  • Rds On (Max) @ Id, Vgs
    115m Ω @ 2.3A, 4.5V

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • REACH SVHC
    No SVHC

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