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FDC6318P

  • In Stock: 23995
  • Available: 283251

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.20900US $1.21
10+US $0.80600US $8.06
30+US $0.60450US $18.14
100+US $0.48360US $48.36
500+US $0.44330US $221.65
1000+US $0.40300US $403.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    FDC6318P
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    PowerTrench®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    1.7mm
  • Height
    1.1mm
  • Length
    3mm
  • Weight
    36mg
  • FET Type
    2 P-Channel (Dual)
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Published
    2001
  • Rise Time
    14ns
  • Resistance
    90MOhm
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    700 mV
  • Part Status
    Active
  • Pbfree Code
    yes
  • Power - Max
    700mW
  • Subcategory
    Other Transistors
  • Termination
    SMD/SMT
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Current Rating
    -2.5A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    6
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Fall Time (Typ)
    14 ns
  • Terminal Finish
    Tin (Sn)
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    10 Weeks
  • Power Dissipation
    960mW
  • Threshold Voltage
    -700mV
  • Number of Channels
    2
  • Number of Elements
    2
  • Turn On Delay Time
    9 ns
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Voltage - Rated DC
    -12V
  • Dual Supply Voltage
    12V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    21 ns
  • Element Configuration
    Dual
  • Max Power Dissipation
    960mW
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    6
  • Rds On (Max) @ Id, Vgs
    90m Ω @ 2.5A, 4.5V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    8nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    8V
  • Continuous Drain Current (ID)
    -2.5A
  • Max Junction Temperature (Tj)
    150°C
  • Drain to Source Breakdown Voltage
    -12V
  • Input Capacitance (Ciss) (Max) @ Vds
    455pF @ 6V
  • Current - Continuous Drain (Id) @ 25°C
    2.5A

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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