FDC6318P
- Manufacturer's Part No.:FDC6318P
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:PowerTrench®
- Description:MOSFET 2P-CH 12V 2.5A SSOT-6
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 23995
- Available: 283251
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.20900 | US $1.21 |
10+ | US $0.80600 | US $8.06 |
30+ | US $0.60450 | US $18.14 |
100+ | US $0.48360 | US $48.36 |
500+ | US $0.44330 | US $221.65 |
1000+ | US $0.40300 | US $403.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.FDC6318P
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesPowerTrench®
- ECCNEAR99
- MountSurface Mount
- Width1.7mm
- Height1.1mm
- Length3mm
- Weight36mg
- FET Type2 P-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2001
- Rise Time14ns
- Resistance90MOhm
- FET FeatureLogic Level Gate
- Nominal Vgs700 mV
- Part StatusActive
- Pbfree Codeyes
- Power - Max700mW
- SubcategoryOther Transistors
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating-2.5A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins6
- Operating ModeENHANCEMENT MODE
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Fall Time (Typ)14 ns
- Terminal FinishTin (Sn)
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time10 Weeks
- Power Dissipation960mW
- Threshold Voltage-700mV
- Number of Channels2
- Number of Elements2
- Turn On Delay Time9 ns
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Voltage - Rated DC-12V
- Dual Supply Voltage12V
- Radiation HardeningNo
- Turn-Off Delay Time21 ns
- Element ConfigurationDual
- Max Power Dissipation960mW
- Operating Temperature-55°C~150°C TJ
- Number of Terminations6
- Rds On (Max) @ Id, Vgs90m Ω @ 2.5A, 4.5V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs8nC @ 4.5V
- Gate to Source Voltage (Vgs)8V
- Continuous Drain Current (ID)-2.5A
- Max Junction Temperature (Tj)150°C
- Drain to Source Breakdown Voltage-12V
- Input Capacitance (Ciss) (Max) @ Vds455pF @ 6V
- Current - Continuous Drain (Id) @ 25°C2.5A
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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