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FDC6321C

  • In Stock: 609000
  • Available: 387637

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.52400US $2.52
10+US $2.27160US $22.72
30+US $1.76680US $53.00
100+US $1.45130US $145.13
500+US $1.38820US $694.10
1000+US $1.26200US $1262.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    FDC6321C
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    -
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Part Status
    Active
  • Operating Temperature
    -55°C~150°C TJ
  • Factory Lead Time
    10 Weeks
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Mount
    Surface Mount
  • Number of Pins
    6
  • Packaging
    Tape & Reel (TR)
  • Subcategory
    Other Transistors
  • Number of Terminations
    6
  • Terminal Form
    GULL WING
  • Number of Elements
    2
  • Lead Free
    Lead Free
  • Radiation Hardening
    No
  • Published
    2015
  • Pbfree Code
    yes
  • Current Rating
    680mA
  • Contact Plating
    Tin
  • Height
    1.1mm
  • Length
    3mm
  • Width
    1.7mm
  • Weight
    36mg
  • Max Power Dissipation
    900mW
  • Power - Max
    700mW
  • Mounting Type
    Surface Mount
  • Transistor Element Material
    SILICON
  • Element Configuration
    Dual
  • Transistor Application
    SWITCHING
  • Power Dissipation
    900mW
  • Number of Channels
    2
  • Turn On Delay Time
    3 ns
  • Turn-Off Delay Time
    55 ns
  • Operating Mode
    ENHANCEMENT MODE
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Continuous Drain Current (ID)
    460mA
  • Resistance
    450mOhm
  • Gate to Source Voltage (Vgs)
    8V
  • Drain to Source Breakdown Voltage
    25V
  • Threshold Voltage
    800mV
  • FET Type
    N and P-Channel
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    50pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    2.3nC @ 5V
  • FET Feature
    Logic Level Gate
  • Rise Time
    9ns
  • Fall Time (Typ)
    9 ns
  • Nominal Vgs
    800 mV
  • Dual Supply Voltage
    25V
  • Feedback Cap-Max (Crss)
    9 pF
  • Current - Continuous Drain (Id) @ 25°C
    680mA 460mA
  • Rds On (Max) @ Id, Vgs
    450m Ω @ 500mA, 4.5V

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • REACH SVHC
    No SVHC

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