FDC6401N
- Manufacturer's Part No.:FDC6401N
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:PowerTrench®
- Description:MOSFET 2N-CH 20V 3A SSOT-6
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- In Stock: 352198
- Available: 445573
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $8.86000 | US $8.86 |
10+ | US $7.97400 | US $79.74 |
30+ | US $6.20200 | US $186.06 |
100+ | US $5.09450 | US $509.45 |
500+ | US $4.87300 | US $2436.50 |
1000+ | US $4.43000 | US $4430.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.FDC6401N
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesPowerTrench®
- ECCNEAR99
- MountSurface Mount
- Width1.7mm
- Height1.1mm
- Length3mm
- Weight36mg
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2017
- Rise Time7ns
- Resistance70MOhm
- FET FeatureStandard
- Nominal Vgs900 mV
- Part StatusActive
- Pbfree Codeyes
- Power - Max700mW
- SubcategoryFET General Purpose Power
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating3A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins6
- Operating ModeENHANCEMENT MODE
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Contact PlatingTin
- Fall Time (Typ)1.6 ns
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time10 Weeks
- Power Dissipation960mW
- Threshold Voltage900mV
- Number of Channels2
- Number of Elements2
- Turn On Delay Time5 ns
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Voltage - Rated DC20V
- Dual Supply Voltage20V
- Radiation HardeningNo
- Turn-Off Delay Time13 ns
- Element ConfigurationDual
- Max Power Dissipation960mW
- Operating Temperature-55°C~150°C TJ
- Number of Terminations6
- Rds On (Max) @ Id, Vgs70m Ω @ 3A, 4.5V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)3A
- Gate Charge (Qg) (Max) @ Vgs4.6nC @ 4.5V
- Gate to Source Voltage (Vgs)12V
- Continuous Drain Current (ID)3A
- Max Junction Temperature (Tj)150°C
- Drain to Source Breakdown Voltage20V
- Input Capacitance (Ciss) (Max) @ Vds324pF @ 10V
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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