FDC8602
- Manufacturer's Part No.:FDC8602
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:PowerTrench®
- Description:MOSFET 2N-CH 100V 1.2A 6-SSOT
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Delivery:
- Available: 3000
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.47840 | US $1.48 |
10+ | US $0.98560 | US $9.86 |
30+ | US $0.73920 | US $22.18 |
100+ | US $0.59136 | US $59.14 |
500+ | US $0.54208 | US $271.04 |
1000+ | US $0.49280 | US $492.80 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.FDC8602
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesPowerTrench®
- ECCNEAR99
- MountSurface Mount
- Width1.7mm
- Height1.1mm
- Length3mm
- Weight36mg
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingCut Tape (CT)
- Rise Time1.7ns
- FET FeatureStandard
- Part StatusActive
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- JEDEC-95 CodeMO-193AA
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins6
- Operating ModeENHANCEMENT MODE
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Fall Time (Typ)2.3 ns
- Terminal FinishTin (Sn)
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time35 Weeks
- Power Dissipation690mW
- Threshold Voltage3.2V
- Additional FeatureULTRA-LOW RESISTANCE
- Number of Elements2
- Turn On Delay Time3.5 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time5.4 ns
- Element ConfigurationDual
- Max Power Dissipation690mW
- Operating Temperature-55°C~150°C TJ
- Number of Terminations6
- Rds On (Max) @ Id, Vgs350m Ω @ 1.2A, 10V
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)5 pF
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs2nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)1.2A
- Max Junction Temperature (Tj)150°C
- Drain to Source Voltage (Vdss)100V
- Drain-source On Resistance-Max0.35Ohm
- Drain to Source Breakdown Voltage100V
- Input Capacitance (Ciss) (Max) @ Vds70pF @ 50V
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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