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FDG6303N

  • In Stock: 200482
  • Available: 908327

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.19470US $0.19
10+US $0.12980US $1.30
30+US $0.09735US $2.92
100+US $0.07788US $7.79
500+US $0.07139US $35.70
1000+US $0.06490US $64.90

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    FDG6303N
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    -
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Part Status
    Active
  • Operating Temperature
    -55°C~150°C TJ
  • Factory Lead Time
    10 Weeks
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Mount
    Surface Mount
  • Number of Pins
    6
  • Packaging
    Tape & Reel (TR)
  • Subcategory
    FET General Purpose Power
  • Number of Terminations
    6
  • Terminal Form
    GULL WING
  • Number of Elements
    2
  • Lead Free
    Lead Free
  • Radiation Hardening
    No
  • Published
    1999
  • Pbfree Code
    yes
  • Current Rating
    500mA
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Voltage - Rated DC
    25V
  • Contact Plating
    Tin
  • Height
    1mm
  • Length
    2mm
  • Width
    1.25mm
  • Weight
    28mg
  • Max Power Dissipation
    300mW
  • Mounting Type
    Surface Mount
  • Transistor Element Material
    SILICON
  • Element Configuration
    Dual
  • Transistor Application
    SWITCHING
  • Termination
    SMD/SMT
  • Power Dissipation
    300mW
  • Turn On Delay Time
    3 ns
  • Turn-Off Delay Time
    17 ns
  • Operating Mode
    ENHANCEMENT MODE
  • Drain Current-Max (Abs) (ID)
    0.5A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Continuous Drain Current (ID)
    500mA
  • Resistance
    450mOhm
  • Gate to Source Voltage (Vgs)
    8V
  • Drain to Source Breakdown Voltage
    25V
  • Threshold Voltage
    800mV
  • FET Type
    2 N-Channel (Dual)
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    50pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    2.3nC @ 4.5V
  • FET Feature
    Logic Level Gate
  • Rise Time
    8.5ns
  • Fall Time (Typ)
    8.5 ns
  • Nominal Vgs
    800 mV
  • Dual Supply Voltage
    25V
  • Rds On (Max) @ Id, Vgs
    450m Ω @ 500mA, 4.5V

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • REACH SVHC
    No SVHC

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