FDG6303N
- Manufacturer's Part No.:FDG6303N
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET 2N-CH 25V 0.5A SC70-6
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- In Stock: 200482
- Available: 908327
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.19470 | US $0.19 |
10+ | US $0.12980 | US $1.30 |
30+ | US $0.09735 | US $2.92 |
100+ | US $0.07788 | US $7.79 |
500+ | US $0.07139 | US $35.70 |
1000+ | US $0.06490 | US $64.90 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.FDG6303N
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- Package / Case6-TSSOP, SC-88, SOT-363
- Part StatusActive
- Operating Temperature-55°C~150°C TJ
- Factory Lead Time10 Weeks
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- MountSurface Mount
- Number of Pins6
- PackagingTape & Reel (TR)
- SubcategoryFET General Purpose Power
- Number of Terminations6
- Terminal FormGULL WING
- Number of Elements2
- Lead FreeLead Free
- Radiation HardeningNo
- Published1999
- Pbfree Codeyes
- Current Rating500mA
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Voltage - Rated DC25V
- Contact PlatingTin
- Height1mm
- Length2mm
- Width1.25mm
- Weight28mg
- Max Power Dissipation300mW
- Mounting TypeSurface Mount
- Transistor Element MaterialSILICON
- Element ConfigurationDual
- Transistor ApplicationSWITCHING
- TerminationSMD/SMT
- Power Dissipation300mW
- Turn On Delay Time3 ns
- Turn-Off Delay Time17 ns
- Operating ModeENHANCEMENT MODE
- Drain Current-Max (Abs) (ID)0.5A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Continuous Drain Current (ID)500mA
- Resistance450mOhm
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage25V
- Threshold Voltage800mV
- FET Type2 N-Channel (Dual)
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds50pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs2.3nC @ 4.5V
- FET FeatureLogic Level Gate
- Rise Time8.5ns
- Fall Time (Typ)8.5 ns
- Nominal Vgs800 mV
- Dual Supply Voltage25V
- Rds On (Max) @ Id, Vgs450m Ω @ 500mA, 4.5V
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- REACH SVHCNo SVHC
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