FDG6320C
- Manufacturer's Part No.:FDG6320C
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET N/P-CH 25V SC70-6
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- In Stock: 3000
- Available: 648958
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $9.27000 | US $9.27 |
10+ | US $8.34300 | US $83.43 |
30+ | US $6.48900 | US $194.67 |
100+ | US $5.33025 | US $533.03 |
500+ | US $5.09850 | US $2549.25 |
1000+ | US $4.63500 | US $4635.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.FDG6320C
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- Series-
- ECCNEAR99
- MountSurface Mount
- Width1.25mm
- Height1.1mm
- Length2mm
- Weight28mg
- FET TypeN and P-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2017
- Rise Time8ns
- Resistance4Ohm
- FET FeatureLogic Level Gate
- Part StatusActive
- Pbfree Codeyes
- SubcategoryOther Transistors
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating220mA
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins6
- Operating ModeENHANCEMENT MODE
- Package / Case6-TSSOP, SC-88, SOT-363
- Contact PlatingTin
- Fall Time (Typ)8 ns
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time10 Weeks
- Power Dissipation300mW
- Threshold Voltage850mV
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Number of Elements2
- Turn On Delay Time5 ns
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Dual Supply Voltage25V
- Radiation HardeningNo
- Turn-Off Delay Time9 ns
- Element ConfigurationDual
- Max Power Dissipation300mW
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Number of Terminations6
- Rds On (Max) @ Id, Vgs4 Ω @ 220mA, 4.5V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs0.4nC @ 4.5V
- Gate to Source Voltage (Vgs)8V
- Continuous Drain Current (ID)220mA
- Max Junction Temperature (Tj)150°C
- Drain to Source Breakdown Voltage25V
- Input Capacitance (Ciss) (Max) @ Vds9.5pF @ 10V
- Current - Continuous Drain (Id) @ 25°C220mA 140mA
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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