FDMC2523P
- Manufacturer's Part No.:FDMC2523P
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- Series:QFET®
- Description:MOSFET P-CH 150V 3A MLP 3.3SQ
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- Quantity:Buy NowAdd to Cart
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- In Stock: 20000
- Available: 111600
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.80340 | US $0.80 |
10+ | US $0.53560 | US $5.36 |
30+ | US $0.40170 | US $12.05 |
100+ | US $0.32136 | US $32.14 |
500+ | US $0.29458 | US $147.29 |
1000+ | US $0.26780 | US $267.80 |
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- Description
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- Shopping Guide
The FDMC2523P is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed and manufactured by ON Semiconductor. This component is typically used in power management applications, including DC-DC converters, power supplies, and motor control circuits.
Key Features:
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Dual N-Channel Configuration: The FDMC2523P contains two N-channel MOSFETs in a single package, allowing for compact designs and efficient use of board space.
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Low On-Resistance (RDS(on)): The device is characterized by a low on-resistance, which minimizes conduction losses and improves overall efficiency in power applications. This is particularly important in high-frequency switching applications.
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High Current Rating: The FDMC2523P can handle significant current levels, making it suitable for applications that require robust power handling capabilities.
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Fast Switching Speed: The MOSFET is designed for fast switching, which is essential for applications that require rapid turn-on and turn-off cycles, such as in switching power supplies.
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Thermal Performance: The package is designed to dissipate heat effectively, which is crucial for maintaining performance and reliability in high-power applications.
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Package Type: The FDMC2523P is typically available in a compact surface-mount package, which facilitates easy integration into modern electronic designs.
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Gate Threshold Voltage: The device has a specified gate threshold voltage, ensuring that it operates effectively within the intended voltage range.
Applications:
- DC-DC Converters: The FDMC2523P is commonly used in buck and boost converters, where efficient switching is critical for energy conversion.
- Power Management: It is suitable for power management circuits in various electronic devices, helping to regulate voltage and current.
- Motor Control: The MOSFET can be utilized in motor driver circuits, providing the necessary control for various types of motors.
Electrical Characteristics:
- Maximum Drain-Source Voltage (VDS): The FDMC2523P can withstand a specified maximum voltage between the drain and source terminals, ensuring safe operation under high-voltage conditions.
- Continuous Drain Current (ID): The device is rated for a continuous drain current, which indicates the maximum current it can handle without overheating.
Conclusion:
The FDMC2523P from ON Semiconductor is a versatile and efficient dual N-channel MOSFET that is well-suited for a variety of power management applications. Its low on-resistance, high current handling capability, and fast switching speed make it an excellent choice for designers looking to optimize performance in compact electronic systems.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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