FDMC8200
- Manufacturer's Part No.:FDMC8200
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:PowerTrench®
- Description:MOSFET 2N-CH 30V 8A/12A POWER33
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Delivery:
- In Stock: 6222700
- Available: 189774
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.79400 | US $2.79 |
10+ | US $2.51460 | US $25.15 |
30+ | US $1.95580 | US $58.67 |
100+ | US $1.60655 | US $160.66 |
500+ | US $1.53670 | US $768.35 |
1000+ | US $1.39700 | US $1397.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.FDMC8200
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesPowerTrench®
- ECCNEAR99
- MountSurface Mount
- Width3mm
- Height750μm
- Length3mm
- Weight186mg
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Rise Time4ns
- Resistance20MOhm
- FET FeatureLogic Level Gate
- Nominal Vgs2.3 V
- Part StatusActive
- Pbfree Codeyes
- Power - Max700mW 900mW
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-PowerWDFN
- Case ConnectionDRAIN-SOURCE
- Contact PlatingGold
- Fall Time (Typ)6 ns
- Lifecycle StatusACTIVE (Last Updated: 1 week ago)
- Factory Lead Time23 Weeks
- Power Dissipation2.2W
- Threshold Voltage2.3V
- Number of Elements2
- Vgs(th) (Max) @ Id3V @ 250μA
- Turn-Off Delay Time38 ns
- Qualification StatusNot Qualified
- Element ConfigurationDual
- Max Power Dissipation900mW
- Operating Temperature-55°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs20m Ω @ 6A, 10V
- Transistor ApplicationSWITCHING
- Turn On Time-Max (ton)30ns
- Feedback Cap-Max (Crss)30 pF
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)8A
- Gate Charge (Qg) (Max) @ Vgs10nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)8A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Pulsed Drain Current-Max (IDM)40A
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds660pF @ 15V
- Current - Continuous Drain (Id) @ 25°C8A 12A
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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