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FDMQ8203

  • Available: 43

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.56000US $2.56
10+US $2.30400US $23.04
30+US $1.79200US $53.76
100+US $1.47200US $147.20
500+US $1.40800US $704.00
1000+US $1.28000US $1280.00

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    FDMQ8203
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    GreenBridge™ PowerTrench®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    4.5mm
  • Height
    750μm
  • Length
    5mm
  • Weight
    210mg
  • FET Type
    2 N and 2 P-Channel (H-Bridge)
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Rise Time
    2.8ns
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    3 V
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    Other Transistors
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    12
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    12-WDFN Exposed Pad
  • Case Connection
    DRAIN
  • Fall Time (Typ)
    2.7 ns
  • Terminal Finish
    Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
  • Base Part Number
    FDMQ8203
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    9 Weeks
  • Power Dissipation
    2.5W
  • Threshold Voltage
    3V
  • Number of Elements
    4
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Radiation Hardening
    No
  • Element Configuration
    Dual
  • Max Power Dissipation
    2.5W
  • Operating Temperature
    -55°C~150°C TJ
  • Polarity/Channel Type
    N-CHANNEL AND P-CHANNEL
  • Number of Terminations
    12
  • Rds On (Max) @ Id, Vgs
    110m Ω @ 3A, 10V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    6A
  • Gate Charge (Qg) (Max) @ Vgs
    5nC @ 10V
  • Gate to Source Voltage (Vgs)
    20V
  • Continuous Drain Current (ID)
    2.6A
  • Drain to Source Voltage (Vdss)
    100V 80V
  • Drain-source On Resistance-Max
    0.11Ohm
  • Drain to Source Breakdown Voltage
    -80V
  • Input Capacitance (Ciss) (Max) @ Vds
    210pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    3.4A 2.6A

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e4
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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