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FDMS3572

  • In Stock: 5244
  • Available: 5244

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.30472US $2.30
10+US $2.07425US $20.74
30+US $1.61330US $48.40
100+US $1.32521US $132.52
500+US $1.26760US $633.80
1000+US $1.15236US $1152.36

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  • Description
  • Alternatives
  • Shopping Guide
Description

The FDMS3572 is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for high-efficiency power management applications, including DC-DC converters, load switching, and other power-related functions.

Key Features:

  1. Configuration: The FDMS3572 features a dual configuration, meaning it contains two N-channel MOSFETs in a single package. This allows for compact designs and efficient use of board space.

  2. Package Type: It is typically available in a compact SO-8 (Small Outline) package, which is surface-mountable. This package type is advantageous for automated assembly processes and helps in reducing the overall footprint on the PCB.

  3. Voltage Rating: The FDMS3572 has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for a variety of low to medium voltage applications.

  4. Current Rating: The device can handle continuous drain currents (I_D) of up to 20A, depending on the thermal conditions and PCB layout. This high current capability makes it suitable for applications requiring significant power handling.

  5. R_DS(on): One of the critical specifications of the FDMS3572 is its low on-resistance (R_DS(on)), which is typically around 10 mΩ at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced conduction losses, enhancing overall efficiency.

  6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically in the range of 1V to 2.5V, allowing for easy drive from standard logic levels.

  7. Thermal Performance: The FDMS3572 is designed to operate efficiently at elevated temperatures, with a maximum junction temperature (T_J) rating of 150°C. This makes it suitable for applications where heat dissipation is a concern.

  8. Applications: Common applications for the FDMS3572 include:

    • Power management circuits
    • DC-DC converters
    • Load switches
    • Motor drivers
    • Battery management systems
  9. Reliability: The device is built to meet stringent reliability standards, making it suitable for automotive and industrial applications where long-term performance is critical.

Summary:

The FDMS3572 from ON Semiconductor is a versatile and efficient dual N-channel MOSFET that offers low on-resistance, high current handling, and compact packaging. Its specifications make it an excellent choice for a wide range of power management applications, ensuring reliable performance in demanding environments.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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