FDMS86263P

The FDMS86263P is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for high-efficiency power management applications, particularly in DC-DC converters, power supplies, and other switching applications.

Key Features:

1. Configuration: The FDMS86263P features a dual configuration, meaning it contains two N-channel MOSFETs in a single package. This allows for compact designs and efficient use of board space.

2. Package Type: It is typically housed in a compact SO-8 (Small Outline 8-lead) package, which is surface-mountable. This package type is favored for its low profile and ease of integration into various circuit designs.

3. Voltage Ratings: The device has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to medium voltage applications.

4. Current Ratings: The FDMS86263P can handle continuous drain currents of up to 10A, depending on the thermal conditions and PCB layout. This capability makes it suitable for applications requiring significant power handling.

5. R_DS(on): One of the critical specifications of the FDMS86263P is its low on-resistance (R_DS(on)), which is typically around 10 mΩ at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced conduction losses and improved efficiency in power applications.

6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically in the range of 1V to 2.5V, allowing for easy drive from standard logic levels.

7. Thermal Performance: The device is designed to operate efficiently at elevated temperatures, with a maximum junction temperature (T_J) rating of 150°C. This allows for reliable operation in demanding environments.

8. Applications: The FDMS86263P is suitable for a variety of applications, including:

   • Synchronous rectification in power supplies
   • DC-DC converters
   • Motor control circuits
   • Load switching applications

9. Reliability: ON Semiconductor provides a robust reliability profile for the FDMS86263P, ensuring it meets industry standards for performance and longevity.

Summary:

The FDMS86263P from ON Semiconductor is a versatile and efficient dual N-channel MOSFET that is ideal for a range of power management applications. Its low on-resistance, high current handling capability, and compact package make it a popular choice among engineers looking to optimize their designs for performance and space efficiency.