FDN339AN
- Manufacturer's Part No.:FDN339AN
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:PowerTrench®
- Description:MOSFET N-CH 20V 3A SSOT3
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 63000
- Available: 517463
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.39780 | US $0.40 |
10+ | US $0.26520 | US $2.65 |
30+ | US $0.19890 | US $5.97 |
100+ | US $0.15912 | US $15.91 |
500+ | US $0.14586 | US $72.93 |
1000+ | US $0.13260 | US $132.60 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.FDN339AN
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesPowerTrench®
- ECCNEAR99
- MountSurface Mount
- Width1.4mm
- Height1.22mm
- Length2.92mm
- Weight30mg
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published1999
- Rise Time10ns
- Vgs (Max)±8V
- Resistance35mOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs850 mV
- Part StatusActive
- Pbfree Codeyes
- SubcategoryFET General Purpose Power
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating3A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Fall Time (Typ)10 ns
- Terminal FinishTin (Sn)
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time10 Weeks
- Power Dissipation500mW
- Terminal PositionDUAL
- Threshold Voltage850mV
- Number of Channels1
- Number of Elements1
- Turn On Delay Time8 ns
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Voltage - Rated DC20V
- Dual Supply Voltage20V
- Radiation HardeningNo
- Turn-Off Delay Time18 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max500mW Ta
- Number of Terminations3
- Rds On (Max) @ Id, Vgs35m Ω @ 3A, 4.5V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)3A
- Gate Charge (Qg) (Max) @ Vgs10nC @ 4.5V
- Gate to Source Voltage (Vgs)8V
- Continuous Drain Current (ID)3A
- Max Junction Temperature (Tj)150°C
- Drain to Source Breakdown Voltage20V
- Input Capacitance (Ciss) (Max) @ Vds700pF @ 10V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Current - Continuous Drain (Id) @ 25°C3A Ta
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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