FDN352AP
- Manufacturer's Part No.:FDN352AP
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:PowerTrench®
- Description:MOSFET P-CH 30V 1.3A SSOT-3
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 8000
- Available: 746736
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.23175 | US $0.23 |
10+ | US $0.15450 | US $1.55 |
30+ | US $0.11588 | US $3.48 |
100+ | US $0.09270 | US $9.27 |
500+ | US $0.08498 | US $42.49 |
1000+ | US $0.07725 | US $77.25 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.FDN352AP
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesPowerTrench®
- ECCNEAR99
- MountSurface Mount
- Width1.4mm
- Height1.22mm
- Length2.92mm
- Current13A
- Voltage30V
- FET TypeP-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Published2005
- Rise Time15ns
- Vgs (Max)±25V
- Resistance180MOhm
- TechnologyMOSFET (Metal Oxide)
- Nominal Vgs-2 V
- Part StatusActive
- Pbfree Codeyes
- SubcategoryOther Transistors
- TerminationSMD/SMT
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating-1.3A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Contact PlatingTin
- Fall Time (Typ)15 ns
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time10 Weeks
- Power Dissipation500mW
- Terminal PositionDUAL
- Threshold Voltage-2V
- Number of Channels1
- Number of Elements1
- Turn On Delay Time4 ns
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Voltage - Rated DC-30V
- Dual Supply Voltage-30V
- Radiation HardeningNo
- Turn-Off Delay Time10 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max500mW Ta
- Number of Terminations3
- Rds On (Max) @ Id, Vgs180m Ω @ 1.3A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs1.9nC @ 4.5V
- Gate to Source Voltage (Vgs)25V
- Continuous Drain Current (ID)-1.3A
- Max Junction Temperature (Tj)150°C
- Drain to Source Breakdown Voltage-30V
- Input Capacitance (Ciss) (Max) @ Vds150pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C1.3A Ta
Environmental & Export Classifications
- HTSUS8541.21.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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