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FDN352AP

  • In Stock: 8000
  • Available: 746736

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.23175US $0.23
10+US $0.15450US $1.55
30+US $0.11588US $3.48
100+US $0.09270US $9.27
500+US $0.08498US $42.49
1000+US $0.07725US $77.25

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Product Parameter

  • Manufacturer
    ON Semiconductor
  • Manufacturer's Part No.
    FDN352AP
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    PowerTrench®
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    1.4mm
  • Height
    1.22mm
  • Length
    2.92mm
  • Current
    13A
  • Voltage
    30V
  • FET Type
    P-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • Rise Time
    15ns
  • Vgs (Max)
    ±25V
  • Resistance
    180MOhm
  • Technology
    MOSFET (Metal Oxide)
  • Nominal Vgs
    -2 V
  • Part Status
    Active
  • Pbfree Code
    yes
  • Subcategory
    Other Transistors
  • Termination
    SMD/SMT
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Current Rating
    -1.3A
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Contact Plating
    Tin
  • Fall Time (Typ)
    15 ns
  • Lifecycle Status
    ACTIVE (Last Updated: 6 days ago)
  • Factory Lead Time
    10 Weeks
  • Power Dissipation
    500mW
  • Terminal Position
    DUAL
  • Threshold Voltage
    -2V
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    4 ns
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Voltage - Rated DC
    -30V
  • Dual Supply Voltage
    -30V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    10 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    500mW Ta
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    180m Ω @ 1.3A, 10V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    1.9nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    25V
  • Continuous Drain Current (ID)
    -1.3A
  • Max Junction Temperature (Tj)
    150°C
  • Drain to Source Breakdown Voltage
    -30V
  • Input Capacitance (Ciss) (Max) @ Vds
    150pF @ 15V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Current - Continuous Drain (Id) @ 25°C
    1.3A Ta

Environmental & Export Classifications

  • HTSUS
    8541.21.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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