FDN359AN
- Manufacturer's Part No.:FDN359AN
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:PowerTrench®
- Description:MOSFET N-CH 30V 2.7A SSOT-3
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 62000
- Available: 397472
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.55110 | US $0.55 |
10+ | US $0.36740 | US $3.67 |
30+ | US $0.27555 | US $8.27 |
100+ | US $0.22044 | US $22.04 |
500+ | US $0.20207 | US $101.04 |
1000+ | US $0.18370 | US $183.70 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerON Semiconductor
- Manufacturer's Part No.FDN359AN
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesPowerTrench®
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Part StatusActive
- Operating Temperature-55°C~150°C TJ
- Factory Lead Time10 Weeks
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- MountSurface Mount
- Number of Pins3
- PackagingTape & Reel (TR)
- SubcategoryFET General Purpose Power
- Number of Terminations3
- Terminal PositionDUAL
- Terminal FormGULL WING
- Number of Elements1
- Lead FreeLead Free
- Radiation HardeningNo
- Published2017
- Pbfree Codeyes
- Current Rating2.7A
- Additional FeatureLOGIC LEVEL COMPATIBLE
- Voltage - Rated DC30V
- Contact PlatingTin
- Height1.12mm
- Length2.92mm
- Width3.05mm
- Weight30mg
- Mounting TypeSurface Mount
- Transistor Element MaterialSILICON
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- TerminationSMD/SMT
- Power Dissipation500mW
- Max Junction Temperature (Tj)150°C
- Number of Channels1
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max500mW Ta
- Turn On Delay Time6 ns
- Turn-Off Delay Time15 ns
- Operating ModeENHANCEMENT MODE
- Continuous Drain Current (ID)2.7A
- Resistance46mOhm
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage30V
- Threshold Voltage1.6V
- FET TypeN-Channel
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds480pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs7nC @ 5V
- Vgs (Max)±20V
- Rise Time13ns
- Fall Time (Typ)13 ns
- Nominal Vgs1.6 V
- Dual Supply Voltage30V
- Current - Continuous Drain (Id) @ 25°C2.7A Ta
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Rds On (Max) @ Id, Vgs46m Ω @ 2.7A, 10V
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- REACH SVHCNo SVHC
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