FDP036N10A

The FDP036N10A is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for high-efficiency power switching applications, making it suitable for various uses in power management, motor control, and other electronic circuits.

Key Specifications:

1. Voltage Rating: The FDP036N10A has a maximum drain-source voltage (V_DS) of 100V, which allows it to handle significant voltage levels in various applications.

2. Current Rating: It can handle a continuous drain current (I_D) of up to 36A at a specified temperature, making it capable of driving high loads effectively.

3. R_DS(on): The on-resistance (R_DS(on)) is typically around 0.036 ohms at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses and improved efficiency during operation.

4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically between 2V and 4V, which indicates the voltage required to start turning the MOSFET on. This feature allows for compatibility with low-voltage control signals.

5. Package Type: The FDP036N10A is available in a TO-220 package, which provides good thermal performance and is suitable for heat dissipation in high-power applications.

6. Thermal Resistance: The thermal resistance from junction to case (RθJC) is low, allowing for effective heat management, which is crucial for maintaining performance and reliability in high-current applications.

Applications:

• Power Supplies: The FDP036N10A is often used in switch-mode power supplies (SMPS) due to its high efficiency and fast switching capabilities.
• Motor Drivers: It can be utilized in motor control circuits, providing efficient switching for driving inductive loads.
• DC-DC Converters: The MOSFET is suitable for buck, boost, and other types of DC-DC converters, where efficient power conversion is essential.
• Automotive Applications: Its robust specifications make it a good candidate for automotive power management systems.

Features:

• Fast Switching Speed: The device is designed for rapid switching, which is beneficial in applications requiring high-frequency operation.
• Low Gate Charge (Q_g): The gate charge is relatively low, which helps in reducing the drive power requirements and improving overall efficiency.
• Avalanche Rated: The FDP036N10A is avalanche rated, meaning it can withstand brief over-voltage conditions without failure, adding to its reliability in demanding environments.

Conclusion:

The FDP036N10A from ON Semiconductor is a versatile and efficient N-channel MOSFET that is well-suited for a variety of high-power applications. Its combination of high current and voltage ratings, low on-resistance, and fast switching capabilities make it an excellent choice for engineers looking to optimize performance in power electronics designs.