FDS6375
- Manufacturer's Part No.:FDS6375
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- Series:PowerTrench®
- Description:MOSFET P-CH 20V 8A 8-SOIC
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- Quantity:Buy NowAdd to Cart
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- In Stock: 2500
- Available: 66039
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.26951 | US $1.27 |
10+ | US $0.84634 | US $8.46 |
30+ | US $0.63475 | US $19.04 |
100+ | US $0.50780 | US $50.78 |
500+ | US $0.46549 | US $232.75 |
1000+ | US $0.42317 | US $423.17 |
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- Description
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- Shopping Guide
The FDS6375 is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for high-efficiency power management applications, making it suitable for use in various electronic devices, including power supplies, DC-DC converters, and motor control circuits.
Key Features:
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Dual Configuration: The FDS6375 contains two N-channel MOSFETs in a single package, allowing for compact designs and efficient use of board space. This dual configuration is particularly beneficial in applications where space is at a premium.
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Low On-Resistance (RDS(on)): The device boasts a low on-resistance, which minimizes conduction losses when the MOSFET is in the 'on' state. This feature is crucial for improving overall efficiency in power applications.
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High Current Rating: The FDS6375 is capable of handling significant current levels, making it suitable for high-power applications. Its robust design ensures reliable performance under demanding conditions.
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Fast Switching Speed: The MOSFET is designed for fast switching, which is essential for applications that require rapid on/off control. This characteristic helps reduce switching losses and improves the overall efficiency of the circuit.
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Thermal Performance: The package is designed to dissipate heat effectively, allowing the FDS6375 to operate at higher temperatures without compromising performance. This is particularly important in high-power applications where thermal management is critical.
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Package Type: The FDS6375 is typically available in a compact surface-mount package, such as the SO-8 or similar, which facilitates easy integration into printed circuit boards (PCBs).
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Gate Threshold Voltage: The device features a suitable gate threshold voltage, ensuring that it can be driven effectively by standard logic levels, making it compatible with a wide range of control circuits.
Applications:
- Power Management: Ideal for use in power supply circuits, including buck converters and boost converters.
- Motor Control: Suitable for driving motors in various applications, including robotics and industrial automation.
- Battery Management Systems: Can be used in battery protection circuits to enhance safety and efficiency.
- Consumer Electronics: Commonly found in devices such as laptops, smartphones, and other portable electronics where power efficiency is critical.
Electrical Characteristics:
- VDS (Drain-Source Voltage): The maximum voltage that can be applied between the drain and source terminals.
- ID (Continuous Drain Current): The maximum continuous current that the MOSFET can handle.
- Pulsed Drain Current: The maximum current the device can handle in short pulses, which is higher than the continuous rating.
Conclusion:
The FDS6375 from ON Semiconductor is a versatile and efficient dual N-channel MOSFET that meets the demands of modern electronic applications. Its combination of low on-resistance, high current handling capability, and fast switching speed makes it an excellent choice for designers looking to optimize power efficiency and performance in their circuits.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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